7MBR15SC120

7MBR15SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 15A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Condition Continuous 1ms Collector current Tc=25°C Tc=80°C Tc=25°C Tc=80°C Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute Rating 1200 ±20 25 15 50 30 15 110 1200 ±20 25 15 50 30 110 1200 1600 1600 15 200 125 1600 15 155 120 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m *1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. Converter Thyristor IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR15SC120 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, Ic=15A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =600V IC=15A VGE=±15V RG=82Ω IF=15A chip terminal IF=15A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=15A, VGE=15V chip terminal V CC =600V IC=15A VGE=±15V RG=82Ω V R=1200V V DM =1600V V RM =1600V VD=6V, IT=1A VD=6V, IT=1A ITM=15A chip terminal IF=15A chip terminal V R=1600V T=25°C T=100°C T=25/50°C Characteristics Typ. Max. 75 200 5.5 7.2 8.5 2.1 2.15 2.6 1800 0.35 0.25 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 3.2 350 75 200 2.6 1.2 0.6 1.0 0.3 75 1.0 1.0 100 2.5 1.05 Unit µA nA V V pF µs Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns µA nA V µs Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 2.1 2.2 0.35 0.25 0.45 0.08 Brake Thyristor Converter 0.95 1.0 1.1 1.2 5000 495 3375 µA mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 75 520 3450 µA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.14 1.85 1.14 1.00 1.30 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C(typ.) 7MBR15SC120 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C(typ.) 35 15V VGE= 20V 30 12V 35 VGE= 20V 15V 12V 30 25 25 Collector current : Ic [ A ] 20 10V 15 Collector current : Ic [ A ] 20 10V 15 10 10 5 8V 5 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 35 Tj= 25°C 30 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C(typ.) Tj= 125°C 8 25 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 6 20 15 4 Ic= 30A 2 Ic= 15A Ic= 7.5A 10 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 1000 600 15 500 400 10 Coes 100 Cres 200 5 50 0 5 10 15 20 25 30 35 0 0 50 100 0 150 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR15SC120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=82Ω, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 82Ω, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton tr ton tr tf 100 100 tf 50 0 5 10 15 20 25 50 0 5 10 15 20 25 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=±15V, Tj= 25°C 5000 5 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=82Ω Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 4 Eon(125°C) 1000 3 Eon(25°C) 500 toff 2 Eoff(125°C) Eoff(25°C) 1 Err(125°C) Err(25°C) 0 ton tr 100 tf 50 30 100 1000 0 5 10 15 20 25 30 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=±15V, Tj= 125°C 12 200 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=82Ω, Tj