7MBR15UF120

This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. MS6M00793 SPECIFICATION 止d for 廃 en 7MBR15UF120 Power Integrated Module 定w de 予 ne DWG.NO. CHECKED DATE No t NAME CHECKED Aug.-06-'04 O. Ikawa D R A W N Aug.-06-'04 K. Komatsu 守comm 保 re K. Yamada Device Name Type Name : : Spec. No. : APPROVED Y. Seki MS6M00793 種n. 機 sig 1/ 16 Fuji Electric Device Technology Co.,Ltd. H04-004-07b a Revised Records Date Classification Ind. Content Applied date Issued date Revised outline (P3/16) Added the note (P4/16) Revised VCE(sat), VF(P6/16) Revised VF curve (P13/16) Revised warning (P14/16) Drawn Checked Checked Approved Aug.-06-' 04 Enactment O. Ikawa K. Yamada Y. Seki Oct.-05-'04 Revision a K. Komatsu O. Ikawa K. Yamada Y. Seki This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. 守comm 保 re No t 止d for 廃 en 定w de 予 ne 種n. 機 sig DWG.NO. a Fuji Electric Device Technology Co.,Ltd. MS6M00793 2/ 16 H04-004-03a H04-004-06b This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. 2. Equivalent circuit 1. Outline Drawing ( Unit : mm ) 守co 保 re No t mm 止d for 廃 en 7MBR15UF120 Specification 定w de 予 ne DWG.NO. Fuji Electric Device Technology Co.,Ltd. Module only designed for mounting on PCB with 1.7±0.3mm thickness MS6M00793 種n. 機 sig a 3/ 16 H04-004-03a a This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. 4. Drilling layout for PCB 3. Pin positions with tolerance ( Unit : mm ) 守comm 保 re No t 止d for 廃 en 定w de 予 ne DWG.NO. Fuji Electric Device Technology Co.,Ltd. Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product. MS6M00793 種n. 機 sig 4/ 16 a H04-004-03a a 5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage I nv er t er Symbols VCES VGES Ic Conditions Maximum Ratings 1200 ±20 Tc=80 C Tc=25oC Tc=80oC Tc=25oC Tc=80oC o Units V V A A A W V V A A W A A A2s o o Continuous 1ms Continuous 1 device 15 24 30 48 15 98 1200 ±20 Collector current Icp -Ic Collector Power Dissipation Collector-Emitter voltage Gate-Emitter voltage B r ake Pc VCES VGES Ic Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150oC,10ms half sine wave Tc=80oC Tc=25 C o o o 10 20 20 40 77 15 280 150 This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. Collector current Collector Power Dissipation Icp Pc Io IFSM It Tj Tstg (*1) 2 Tc=80 C Tc=25 C C o nv e r t e r Average Output Current Surge Current (Non-Repetitive) It 2 (Non-Repetitive) Junction temperature Storage temperature Isolation voltage between terminal and baseplate between thermistor and others (*2) Mounting Screw Torque M4 (*1) All terminals should be connected together when isolation test will be done. (*2) Terminal T1 and T2 should be connected together. And another terminals should be connected together and shorted to baseplate. 守comm 保 re No t 止d for 廃 en 定w de 予 ne Viso AC : 1min. 種n. 機 sig 390 C C -40~ +125 2500 2500 V V N.m 1.3～1.7 DWG.NO. a Fuji Electric Device Technology Co.,Ltd. MS6M00793 5/ 16 H04-004-03a 6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VGE = VCE = VCE = Conditions 0 V, VCE = 1200 V 0 V, VGE = ±20 V 20 V, Ic = Tj= 25°C 15 V, Tj= 125°C 15 A Tj= 25°C Tj= 125°C VGE = f= Vcc= Ic = VGE = RG = 0 V, VCE = 1 MHz 600 V 15 A ±15 V 100  Tj= 25°C IF = 15 A Tj= 125°C Tj= 25°C Tj= 125°C IF = VGE = VCE = VCE = 15 A 0 V, VCE = 1200 V 0 V, VGE = ±20 V 20 V, Ic = 10 V 15 mA Characteristics min. typ. Max. 4.5 6.5 2.10 2.05 1000 0.41 0.28 0.03 0.37 0.07 2.40 2.30 1.00 200 8.5 2.55 2.50 1.2 0.6 1.0 0.30 2.90 2.80 350 1.00 200 8.5 2.5 2.40 1.2 0.6 1.0 0.30 350 1.00 1.5 1.0 5250 3450 mA Ω K ns mA V s  V V s  V Units mA nA V VCE(sat) (Terminal) VGE = VCE(sat) (Chip) Ic = 2.45 a 2.90 a 2.40 a 2.85 a In v e rte r Input capacitance Turn-on time Cies ton tr tr(i) pF Turn-off time This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. toff tf VF (Terminal) VF (Chip) Forward on voltage 1.95 a 2.35 a 1.85 a 2.35 a Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Br a k e trr ICES IGES VGE(th) ns mA nA V Input capacitance Turn-on time Turn-off time 守comm 保 re Cies ton tr tf trr IRRM VFM IRRM R B toff 止d for 廃 en VCE(sat) Ic = (Chip) VGE = f= Vcc= Ic = VGE = RG = IF = VR = IF = VR = T = 25 C T =100oC T = 25/50oC o VCE(sat) (Terminal) VGE = 定w de 予 ne 10 mA Tj= 25°C 15 V, Tj= 125°C 10 A Tj= 25°C 0 V, VCE = 1 MHz Tj= 125°C 10 V 600 V 10 A ±15 V 100  15 A 1200 V 15 A chip terminal 1600 V 種n. 機 sig 4.5 4750 3305 6.5 2.05 2.00 800 0.41 0.28 0.37 0.03 1.1 1.2 5000 495 3375 2.40 a 2.85 a 2.35 a 2.80 a pF No t Reverse recovery time Reverse current Thermistor Converter Forward on voltage Reverse current Resistance B value DWG.NO. a Fuji Electric Device Technology Co.,Ltd. MS6M00793 6/ 16 H04-004-03a 7. Thermal resistance characteristics Items Thermal resistance (1 device) Rth(j-c) Symbols Inverter IGBT Inverter FWD Brake IGBT Brake diode Converter Diode Contact Thermal resistance Rth(c-f) with Thermal Compound (*) Conditions Characteristics min. typ. Max. 0.50 1.62 1.73 1.81 2.01 1.40 - Units o C/W o C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. 8. Indication on module Serial No. □ □ □ 7MBR15UF120 15A 1200V U. K. □□□□□ Lot. No. 9. Applicable category This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. This specification is applied to Power Integrated Module named 7MBR15UF120. 10. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when transporting. 11. Definitions of switching time 守comm 保 re No t L Vcc V CE Ic 止d for 廃 en 0V V GE VCE Ic 10% 定w de 予 ne ～ ～ trr Irr 90% 種n. 機 sig 90% 0V ～ ～ Ic 90% RG V GE 0V 0A 10% tr(i) tr ton toff ～ ～ VCE tf 10% 12. Packing and Labeling Display on the packing box ‐ Logo of production ‐ Type name ‐ Lot. No. ‐ Products quantitiy in a packing box DWG.NO. a Fuji Electric Device Technology Co.,Ltd. MS6M00793 7/ 16 H04-004-03a Reliability Test Items Test categories Reference AcceptNumber norms ance EIAJ ED-4701 of sample number 5 5 (0:1) (0:1) Test items Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength Mechanical Tests Pull force Test time Screw torque Test time : : : : 10N 10±1 sec. 1.3 ~ 1.7 N･ m (M4) 10±1 sec. Test Method 401 MethodⅠ Test Method 402 methodⅡ Test Method 403 Reference 1 Condition code B 3 Vibration 4 Shock This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. Environment Tests 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Temperature Cycle Range of frequency : 0.1 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 3 hr. (1hr./direction) Maximum acceleration : 9800m/s 2 Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±2 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : Low temp. -40±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100 5 (0:1) Test Method 404 Condition code D 5 (0:1) Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 105 5 5 5 (0:1) (0:1) (0:1) 5 (0:1) Dwell time Number of cycles 5 Thermal Shock Test temp. 守comm 保 re No t Low temp. 0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles 止d 廃 en 定w de 予 ne for +0 -5 種n. 機 sig Test Method 307 method Ⅰ 5 (0:1) ℃ +5 -0 Condition code A DWG.NO. a Fuji Electric Device Technology Co.,Ltd. MS6M00793 8/ 16 H04-004-03a Reliability Test Items Test categories Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition) Test Method 101 Test items Test methods and conditions 1 High temperature Reverse Bias 5 (0:1) Test temp. Bias Voltage Bias Method Test duration Endurance Tests : Ta = 125±5 ℃ (Tj ≦ ℃) 150 : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test Method 101 2 High temperature Bias (for gate) 5 (0:1) Test temp. Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd. 3 Intermitted Operating Life (Power cycle) ( for IGBT ) : Ta = 125±5 ℃ (Tj ≦ ℃) 150 : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=100±5 deg  Tj ≦ ℃, Ta=25±5 ℃ 150 : 8500 cycles Test Method 106 5 P