This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
CHECKED
DATE
CHECKED Dec.-10- '04
No t
NAME
O. Ikawa Device Name Type Name Spec. No. : : :
D R A W N Dec.-10- '04 K. Komatsu
守comm 保 re
K. Yamada
APPROVED
MS6M00816
SPECIFICATION
止d for 廃 en
7MBR30UF060
Power Integrated Module
定w de 予 ne
DWG.NO.
Y. Seki
MS6M00816
種n. 機 sig
1/ 16
Fuji Electric Device Technology Co.,Ltd.
H04-004-07b
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
Date Classification
Dec.-10-'04 Enactment
守comm 保 re
No t
Ind. Content
Issued date
止d for 廃 en
Revised Records
Applied date
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Fuji Electric Device Technology Co.,Ltd.
Drawn
定w de 予 ne
Checked
MS6M00816
種n. 機 sig
O. Ikawa K. Yamada
2/ 16
Y. Seki
Checked Approved
H04-004-03a H04-004-06b
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
2. Equivalent circuit 1. Outline Drawing ( Unit : mm )
守comm 保 re
No t
止d for 廃 en
7MBR30UF060 Specification
定w de 予 ne
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
Module only designed for mounting on PCB with 1.7±0.3mm thickness
MS6M00816
種n. 機 sig
3/ 16
H04-004-03a
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
3. Pin positions with tolerance ( Unit : mm )
4. Drilling layout for PCB
守comm 保 re
No t
止d for 廃 en
定w de 予 ne
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
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種n. 機 sig
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H04-004-03a
5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage
I nv er t er
Symbols VCES VGES Ic
Conditions
Maximum Ratings 600 ±20 Tc=80℃ Tc=25oC Tc=80℃ Tc=25oC Tc=80℃ 30 45 60 90 30 102 600 ±20
Units V V A A A W V V A A W A A A2s
o o
Continuous 1ms Continuous 1 device
Collector current
Icp -Ic
Collector Power Dissipation Collector-Emitter voltage Gate-Emitter voltage
B r ak e
Pc VCES VGES Ic
Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150oC,10ms half sine wave
Tc=65℃ Tc=25 C
o
20 25 40 50 76 30 240 288 150
Collector current
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
Icp Pc Io IFSM It Tj Tstg
(*2) 2
Tc=65℃ Tc=25 C
o
Collector Power Dissipation
C onv er t er
Average Output Current Surge Current (Non-Repetitive) It
2
(Non-Repetitive)
Junction temperature Storage temperature Isolation voltage between terminal and baseplate(*1) between thermistor and others
Mounting Screw Torque M4 (*1) All terminals should be connected together when isolation test will be done. (*2) Terminal T1 and T2 should be connected together. And another terminals should be connected together and shorted to baseplate.
守comm 保 re
No t
止d for 廃 en
定 予 ne
Viso
AC : 1min.
de w
種n. 機 sig
C C
-40~ +125 2500 2500
V V N.m
1.3~1.7
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MS6M00816
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6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbols ICES IGES VGE(th) VGE = VCE = VCE = Conditions 0 V, VCE = 600 V 0 V, VGE = ±20 V 20 V, Ic = Tj=25℃ 15 V, Tj=125℃ 30 A Tj=25℃ Tj=125℃ 0 V, VCE = 1 MHz 300 V 30 A ±15 V 68 Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ IF = VGE = VCE = VCE = 30 A 0 V, VCE = 600 V 0 V, VGE = ±20 V 20 V, Ic = 10 V 30 mA Characteristics min. typ. Max. 4.5 6.0 1.75 2.10 1.60 1.95 3000 0.30 0.08 0.05 0.40 0.05 1.95 2.05 1.80 1.90 1.0 200 7.5 2.15 2.50 2.00 2.35 1.20 0.60 1.00 0.35 2.55 2.65 2.40 2.50 300 1.0 ns mA nA V V s pF V Units mA nA V
VCE(sat) (Terminal) VGE = VCE(sat) Ic = (Chip) Cies ton tr tr(i) VGE = f= Vcc= Ic = VGE = RG =
Inverter
Turn-off time
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
toff tf VF (Terminal) VF (Chip)
Forward on voltage
IF =
30 A
Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter
trr ICES IGES VGE(th)
saturation voltage Input capacitance Turn-on time Turn-off time
守comm 保 re
ton tr tf trr IRRM VFM IRRM R B toff
止d for 廃 en
(Chip) Cies VGE = f= Vcc= Ic = VGE = RG = IF = VR = IF = VR = T = 25 C T =100oC T = 25/50oC
o
VCE(sat) (Terminal) VGE = VCE(sat) Ic =
Brake
定w de 予 ne
Tj=25℃ chip terminal 15 V, Tj=125℃ 20 A Tj=25℃ 0 V, VCE = 1 MHz Tj=125℃ 10 V 300 V 20 A ±15 V 150 20 A 600 V 30A 800 V
15 mA
種n. 機 sig
4.5 6.0 1.95 2.35 1.85 2.25 1500 0.35 0.12 0.40 0.05 1.1 1.2 5000 495 3375
200 7.5
2.45 2.85 2.35 2.75 1.20 0.60 1.00 0.35 350 1.00 1.5 1.0 ns mA V mA Ω K s pF V
Reverse recovery time Reverse current
Thermistor Converter
No
t
Forward on voltage Reverse current Resistance B value
4750 3305
5250 3450
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MS6M00816
6/ 16
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7. Thermal resistance characteristics Items Thermal resistance (1 device) Symbols Conditions Inverter IGBT Inverter FWD Brake IGBT Brake diode Converter Diode with Thermal Compound (*) Characteristics min. typ. Max. Units 1.23 0.50 1.76 1.65 2.04 1.41 o
Rth(j-c)
C/W
Contact Thermal resistance
Rth(c-f)
o
C/W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
8. Indication on module
Serial No. 7MBR30UF060 30A 600V
U. K.
□□□□□
□ □ □
Lot. No.
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
9. Applicable category This specification is applied to Power Integrated Module named 7MBR30UF060. 10. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust.
・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals.
・ Do not drop or otherwise shock the modules when transporting.
11. Definitions of switching time
守comm 保 re
t No
L Vcc V CE Ic
止d for 廃 en
0V V GE VCE
定w de 予 ne
~ ~
trr Irr
90%
種n. 機 sig
90%
0V
~ ~
Ic
90%
RG V GE
0V 0A
tr(i) tr ton toff
~ ~
Ic
10%
10%
VCE tf
10%
12. Packing and Labeling Display on the packing box ‐ Logo of production ‐ Type name ‐ Lot. No. ‐ Products quantitiy in a packing box
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
MS6M00816
7/ 16
H04-004-03a
Reliability Test Items
Test categories Reference AcceptNumber norms ance EIAJ ED-4701 of sample number 5 5 (0:1) (0:1)
Test items
Test methods and conditions
(Aug.-2001 edition)
1 Terminal Strength (Pull test) 2 Mounting Strength
Mechanical Tests
Pull force Test time Screw torque Test time
: : : :
10N 10±1 sec. 1.3 ~ 1.7 N・ m (M4) 10±1 sec.
Test Method 401 MethodⅠ Test Method 402 methodⅡ Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
Environment Tests
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Temperature Cycle
Range of frequency : 0.1 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 3 hr. (1hr./direction) Maximum acceleration : 9800m/s 2 Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±2 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : Low temp. -40±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(0:1)
Test Method 404 Condition code D
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Dwell time Number of cycles 5 Thermal Shock Test temp.
守comm 保 re
No t
Low temp. 0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
止d for 廃 en
定w de 予 ne
℃
+5 -0
種n. 機 sig
Test Method 307 method Ⅰ
5
(0:1)
Condition code A
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
MS6M00816
8/ 16
H04-004-03a
Reliability Test Items
Test categories Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition)
Test Method 101
Test items
Test methods and conditions
1 High temperature Reverse Bias
5
(0:1)
Test temp. Bias Voltage Bias Method Test duration
: Ta = 125±5 ℃ (Tj ≦ ℃) 150 : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
Endurance Tests
2 High temperature Bias (for gate)
5
(0:1)
Test temp. Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used f or th e m an u fa ct u ri n g p ur po s es wi th o ut th e e xp r es s w r it te n c o ns en t o f Fuji Electric Device Technology Co.,Ltd.
3 Intermitted Operating Life (Power cycle) ( for IGBT )
: Ta = 125±5 ℃ (Tj ≦ ℃) 150 : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=100±5 deg Tj ≦ ℃, Ta=25±5 ℃ 150 : 8500 cycles
Test Method 106
5
P