7MBR35SB140_0105

7MBR35SB140 IGBT MODULE (S series) 1400V / 35A / PIM IGBT Modules Features Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso Condition Rating 1400 ±20 50 35 100 70 35 240 1400 ±20 35 25 70 50 180 1400 1600 35 360 648 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Continuous 1ms Collector current Tc=25°C Tc=75°C Tc=25°C Tc=75°C Unit V V A A A W V V A A W V V A A A 2s °C °C V N·m Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25°C Tc=75°C Tc=25°C Tc=75°C Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR35SB140 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=35mA VGE=15V, Ic=35A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=35A VGE=±15V RG=33Ω IF=35A chip terminal Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.35 2.7 4200 0.35 0.25 0.1 0.45 0.08 2.4 2.55 1.2 0.6 1.0 0.3 V 3.4 0.35 1.0 0.2 2.8 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 µs mA µA V µs Unit mA µA V V pF µs Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value IF=35A VCES=1400V, VGE=0V VCE=0V, VGE=±20V IC=25A, VGE=15V chip terminal V CC =800V IC=25A VGE=±15V RG=51Ω V R=1400V IF=35A chip terminal VR=1600V T=25°C T=100°C T=25/50°C 2.2 2.35 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375 Converter mA V mA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.52 0.90 0.69 0.75 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 80 VGE= 20V 15V 12V 80 7MBR35SB140 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V 60 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 40 10V 40 20 20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 8V 5 Collector - Emitter voltage : VCE [ V ] 80 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Tj= 25°C Tj= 125°C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 10 60 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 40 4 Ic= 70A 2 Ic= 35A Ic= 17.5A 20 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 600 15 1000 Coes 400 10 200 5 Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 Gate charge : Qg [ nC ] 300 0 400 IGBT Module 7MBR35SB140 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33 ohm, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33 ohm, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr 100 tf 50 0 20 40 60 Collector current : Ic [ A ] 100 tf 50 0 20 40 60 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 25°C 5000 14 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=33 ohm Eon(125°C) 12 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10 Eon(25°C) 8 1000 500 toff 6 Eoff(125°C) Eoff(25°C) ton 100 tr tf 50 10 4 Err(125°C) 2 Err(25°C) 0 50 100 500 0 20 40 60 Gate resistance : Rg [ ohm ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 125°C 25 Eon 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 80 15 60 10 Eoff 40 5 20 Err 0 10 0 50 100 500 0 200 400 600 800 1000 1200 1400 1600 Gate resistance : Rg [ ohm ] IGBT Module 7MBR35SB140 [ Inverter ] Forward current vs. Forward on voltage (typ.) 80 Tj=125°C Tj=25°C 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=33 ohm Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 60 trr(125°C) 100 trr(25°C) Forward current : IF [ A ] 40 Irr(125°C) 20 Irr(25°C) 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 10 20 30 40 50 60 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 80 Tj= 25°C Tj= 125°C 60 Forward current : IF [ A ] 40 20 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 5 200 100 Thermal resistanse : Rth(j-c) [ °C/W ] 1 FWD[Inverter] Conv. Diode IGBT[Brake] IGBT[Inverter] 10 0.1 1 0.01 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] IGBT Module 7MBR35SB140 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 60 60 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 50 VGE= 20V 12V 15V 50 VGE= 20V 15V 12V Collector current : Ic [ A ] 40 Collector current : Ic [ A ] 40 10V 30 30 10V 20 20 10 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 10 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 60 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Tj= 25°C 50 Tj= 125°C 40 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 30 4 Ic= 50A 2 Ic= 25A Ic= 12.5A 20 10 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=25A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 600 15 1000 400 10 Coes 200 5 Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 50 100 150 200 Gate charge : Qg [ nC ] 0 250 IGBT Module Outline Drawings, mm 7MBR35SB140 mass : 260g