7MBR35SD120_04

7MBR35SD120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 35A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Condition Continuous 1ms Collector current Tc=25°C Tc=80°C Tc=25°C Tc=80°C Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Junction temperature (except Thyristor) Tj Storage temperature Tstg Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Thyristor Converter 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute Rating 1200 ±20 50 35 100 70 35 240 1200 ±20 35 25 70 50 180 1200 1600 1600 35 390 125 1600 35 360 648 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m *1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR35SD120 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=35mA VGE=15V, Ic=35A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =600V IC=35A VGE=±15V RG=33Ω IF=35A chip terminal IF=35A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=25A, VGE=15V chip terminal V CC =600V IC=25A VGE=±15V RG=51Ω V R=1200V V DM =1600V V RM =1600V VD=6V, IT=1A VD=6V, IT=1A ITM=35A chip terminal IF=35A chip terminal V R=1600V T=25°C T=100°C T=25/50°C Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Characteristics Typ. Max. 200 200 5.5 7.2 8.5 2.1 2.25 2.7 4200 0.35 0.25 0.45 0.08 2.3 2.45 1.2 0.6 1.0 0.3 3.3 350 200 200 2.7 1.2 0.6 1.0 0.3 200 1.0 1.0 100 2.5 1.2 Unit µA nA V V pF µs V ns µA nA V µs Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 2.1 2.25 0.35 0.25 0.45 0.08 Brake Thyristor Converter 1.1 1.2 1.1 1.2 5000 495 3375 µA mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 200 520 3450 µA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.52 0.90 0.69 1.00 0.75 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 80 VGE= 20V 15V 12V 80 7MBR35SD120 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V 60 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 40 10V 40 20 20 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 80 Tj= 25°C Tj= 125°C 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 60 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 40 4 Ic= 70A 2 Ic= 35A Ic= 17.5A 20 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 0 0 100 200 Gate charge : Qg [ nC ] 300 0 400 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR35SD120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 33Ω, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 33Ω, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 20 40 60 50 0 20 40 60 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C 5000 10 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=33Ω Eon(125°C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 8 1000 6 Eon(25°C) 500 toff 4 Eoff(125°C) ton tr 100 tf 50 10 50 100 500 Eoff(25°C) 2 Err(125°C) Err(25°C) 0 0 20 40 60 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C 25 Eon 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 300 15 200 10 SCSOA (non-repetitive pulse) Eoff 100 5 RBSOA Err 0 10 50 100 500 0 0 200 400 600 800 1000 1200 1400 Gate resistance : Rg [ Ω ] IGBT Module 7MBR35SD120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 80 Tj=125°C Tj=25°C 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=33Ω Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 60 trr(125°C) 100 trr(25°C) Forward current : IF [ A ] 40 20 Irr(125°C) Irr(25°C) 0 0 1 2 3 4 10 0 10 20 30 40 50 60 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 80 Tj= 25°C Tj= 125°C 100 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tjw= 125°C 60 Forward current : IF [ A ] 40 10 20 0 0.0 0.4 0.8 1.2 1.6 2.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 5 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ °C/W ] Thyristor 1 FWD[Inverter] Conv. Diode IGBT[Brake] IGBT[Inverter] Resistance : R [ kΩ ] 10 0.1 1 0.01 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ °C ] IGBT Module 7MBR35SD120 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 60 60 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V 50 50 VGE= 20V 15V 12V Collector current : Ic [ A ] 40 Collector current : Ic [ A ] 40 10V 30 30 10V 20 20 10 10 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 60 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Tj= 25°C 50 Tj= 125°C 40 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 30 4 Ic= 50A 2 Ic= 25A Ic= 12.5A 20 10 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 600 15 1000 400 10 200 5 Coes Cres 100 0 5 10 15 20 25 30 35 0 0 50 100 150 200 0 250 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] IGBT Module Outline Drawings, mm 7MBR35SD120 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En)