7MBR35UB120

7MBR35UB120 IGBT MODULE (U series) 1200V / 35A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current ICP -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) 1ms Symbol VCES VGES IC Condition Rating 1200 ±20 35 25 70 50 35 70 160 1200 ±20 25 15 50 30 115 1200 1600 35 360 648 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A Continuous Tc=25°C Tc=80°C Tc=25°C Tc=80°C Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1ms 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C W V V A PC V RRM V RRM IO IFSM I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute W V V A A A 2s °C °C V V N·m *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM IRRM R B Symbol Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=35mA Tj=25°C VGE=15V Tj=125°C Ic=35A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=600V IC=35A VGE=±15V RG= 43 Ω VGE= 0 V IF=35A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Min. 4.5 465 3305 7MBR35UB120 Characteristics Typ. Max. 1.0 200 6.5 8.5 2.15 2.60 2.50 1.95 2.40 2.30 3 0.53 1.20 0.43 0.60 0.03 0.37 1.00 0.07 0.30 1.95 2.30 2.10 1.75 2.10 1.90 0.35 1.0 200 2.30 2.80 2.75 2.10 2.60 2.55 0.53 1.20 0.43 0.60 0.37 1.00 0.07 0.30 1.0 1.20 1.50 1.10 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.76 1.19 1.07 0.73 0.05 Unit mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=35A VCE=1200V, VGE=0V VCE=0V, VGE=±20V Tj=25°C IC=25A Tj=125°C VGE=15V Tj=25°C Tj=125°C V CC=600V IC=25A VGE=±15V RG= 68 Ω V R=1200V IF=35A VGE=0V V R=1600V T=25°C T=100°C T=25/50°C Condition Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound µs mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value µs Converter terminal chip mA V mA Ω K Unit Item Thermistor Thermal resistance Characteristics Min. - Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 60 VGE=20V 50 Collector current : Ic [A] Collector current : Ic [A] 40 30 20 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 15V 12V 50 40 30 7MBR35UB120 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 60 VGE=20V 15V 12V 10V 10V 20 10 8V 3 4 5 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 60 50 Collector current : Ic [A] 40 30 20 10 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Tj=25°C Tj=125°C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 6 4 Ic=50A Ic=25A Ic= 12.5A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 10.0 Capacitance : Cies, Coes, Cres [ nF ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25°C Cies VGE 1.0 Coes Cres 0.1 0 10 20 30 0 0 30 60 VCE 90 120 150 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=43Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 7MBR35UB120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=43Ω, Tj=125°C 1000 ton tr toff 100 1000 toff ton tr 100 tf tf 10 0 10 20 30 40 50 Collector current : Ic [ A ] 10 0 10 20 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C 10000 tr ton toff 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 15 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=43Ω 12 Eon(125°C) 9 Eon(25°C) 100 tf 6 Eoff(125°C) Eoff(25°C) Err(125°C) Err(25°C) 3 10 10.0 100.0 Gate resistance : Rg [ Ω ] 1000.0 0 0 10 20 30 40 50 60 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 80 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 43Ω ,Tj