7MBR50NE-060

Power Integrated Module (PIM) n Features • • • • n Outline Drawing Included Rectifier and Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I 2t (Non Repetitive) Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM VRSM IO IFSM VCES VGES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Ratings 600 ± 20 50 100 50 200 800 900 50 350 648 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 1.7 Units V A W V A A2s V A W V A °C V Nm Continuous 1ms 1ms 1 device 50Hz/60Hz sin. wave Tj=150°C, 10ms Tj=150°C, 10ms Continuous 1ms 1 device 10ms A.C. 1min. Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V IC=50A f=1MHz, VGE=0V, VCE=10V VCC = 300V IC = 50A VGE = ±15V RG = 51Ω IF=50A VGE=0V IF=50A IF = 50A VR =800V VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC = 300V IC = 50A VGE = ±15V RG = 51Ω VR=600V Min. Max. 1.0 20 4.5 7.5 2.9 3300 (typ.) 1.2 0.6 1.0 0.35 3.1 350 1.55 1.0 1.0 100 2.8 0.8 0.6 1.0 0.35 1.0 600 Units mA µA V pF µs V ns V mA mA nA V µs mA ns n Thermal Characteristics Items Thermal Resistance (1 device) Contact Thermal Resistance Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT Converter Diode With Thermal Compound Min. Max. 0.63 1.60 0.63 2.10 0.05 (typ.) Units °C/W Collector current vs. Collector-Emitter voltage T j=25°C 125 V GE =20V,15V,12V, 100 100 C Collector current vs. Collector-Emitter voltage T j=125°C 125 V GE =20V,15V, 12V, C [A] Collector current : I 10V Collector current : I 75 [A] 75 10V 50 50 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 100A 50A 25A 4 IC= 100A 50A 2 2 25A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =300V, R G =51 W , V GE =±15V, T j=25°C 1000 1000 Switching time vs. Collector current V CC =300V, R G =51 Ω , V GE =±15V, Tj=125°C , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off t off t on tr tf tr tf 100 on on 100 Switching time : t 10 0 20 40 60 80 Collector current : I C [ A] Switching time : t 10 0 20 40 60 80 Collector current : I C [ A] Switching time vs. R G V CC =300V, I C =30A, V GE =±15V, T j=25°C 500 Dynamic input characteristics T j=25°C 25 V CC =200V , t r , t off , t f [nsec] 1000 CE t on t off tr tf [V] 400 300V 400V 20 Collector-Emitter voltage : V 300 15 on Switching time : t 100 200 10 100 5 10 10 100 Gate resistance : R G [ Ω ] FRD Forward current vs. Forward voltage V GE = O V 70 0 0 50 100 150 0 Gate charge : Q G [ nC] Reverse recovery characteristics t rr , I rr v s. I F [nsec] T j=125°C 25°C [A] 60 t rr 1 25°C 100 t rr 2 5°C [A] rr Reverse recovery current : I 50 40 30 20 10 0 0 1 2 Forward voltage : V F [ V] 3 4 F Forward current : I Reverse recovery time :t rr I rr 1 25°C 10 I rr 2 5°C 1 0 10 20 30 40 50 Forward current : I F [ A] Reversed biased safe operating area Transient thermal resistance 300 FRD Converter Diode 1 +V GE =15V, -V GE < 15V, T j< 125°C, R G > 82 Ω [°C/W] 250 th(j-c) C [A] 200 SCSOA (non-repetitive pulse) 150 IGBT Thermal resistance : R Collector current : I 0,1 100 50 RBSOA (Repetitive pulse) 0 0 ,001 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V C E [ V] Switching loss vs. Collector current 5 V CC =300V, R G =51 Ω , V GE =±15V 10 Capacitance vs. Collector-Emitter voltage T j=25°C , E off , E rr [mJ/cycle] 4 , C oes , C res [nF] E off 1 25°C C ies 3 E off 2 5°C on Switching loss : E 2 Capacitance : C E on 1 25°C E on 2 5°C ies 1 C oes C res 0,1 1 E rr 1 25°C E rr 2 5°C 0 20 40 60 80 C ollector Current : I C [ A] Converter Diode Forward current vs. Forward voltage 60 V GE = O V T j=125°C 25°C 50 0 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [ V] [A] Forward current : I F 40 30 20 10 0 0 ,0 0,5 1,0 1,5 2,0 Forward voltage : V F [ V] Brake Chopper IGBT Collector current vs. Collector-Emitter voltage T j= 2 5 ° C 125 V GE =20V,15V,12V, 100 100 C Collector current vs. Collector-Emitter voltage T j= 1 2 5 ° C 125 V GE =20V,15V, 12V, C [A] Collector current : I Collector current : I 75 [A] 10V 75 10V 50 50 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j= 2 5 ° C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j= 1 2 5 ° C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 I C= 100A 50A 25A 4 I C= 100A 50A 2 2 25A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC = 3 0 0 V , R G = 5 1 W , V GE = ± 1 5 V , T j = 2 5 ° C 1000 1000 Switching time vs. Collector current V CC = 3 0 0 V , R G = 5 1 Ω , V GE = ± 1 5 V , T j = 1 2 5 ° C , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off t off t on tr tf tr tf 100 on on 100 Switching time : t 10 0 20 40 60 80 Collector current : I C [ A] Switching time : t 10 0 20 40 60 80 Collector current : I C [ A] Switching time vs. R G V CC =300V, I C = 5 0 A , V GE = ± 1 5 V , T j = 2 5 ° C Brake Chopper IGBT Dynamic input characteristics T j= 2 5 ° C 500 t on t off CE 25 V CC = 2 0 0 V 1000 400 300V 400V 20 , t r , t off , t f [nsec] tr tf 100 [V] 300 15 Collector-Emitter voltage : V 200 10 Switching time : t on 100 5 10 10 Gate resistance : R G [ Ω ] 100 0 0 50 100 150 200 250 0 300 G a t e c h a r g e : Q G [ nC] Reversed biased safe operating area + V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 51 Ω 500 5 Switching loss vs. Collector current V CC = 3 0 0 V , R G = 5 1 Ω , V GE = + 1 5 V E off, E rr[mJ/cycle] 400 4 E off 1 2 5 C [A] 300 SCSOA (non-repetitive pulse) 3 E off 2 5 C Collector current : I C on, E on 1 2 5 C 2 E on 2 5 C 100 RBSOA (Repetitive pulse) 0 0 100 200 300 400 500 600 Collector-Emitter voltage : V C E [ V] Switching loss : E 200 1 E rr1 2 5 C 0 0 20 40 60 Collector-Emitter Current : I C [A] E rr 2 5 C 80 Capacitance vs. Collector-Emitter Voltage Tj=25C 10 C oes ,C res [nF] C ies Capacitance : C ies , 1 C oes C res 0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V C E [V] P.O. 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