7MBR50SB140
IGBT MODULE (S series) 1400V / 50A / PIM
IGBT Modules
Features
Applications
· Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage
Inverter
Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso
Condition
Rating 1400 ±20 75 50 150 100 50 360 1400 ±20 35 25 70 50 180 1400 1600 50 520 1352 +150 -40 to +125 AC 2500 AC 2500 3.5 *1
Continuous 1ms
Collector current
Tc=25°C Tc=75°C Tc=25°C Tc=75°C
Unit V V A A A W V V A A W V V A A A 2s °C °C V N·m
Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current
Brake
1 device
Continuous 1ms 1 device
Tc=25°C Tc=75°C Tc=25°C Tc=75°C
Converter
50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave
Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter
7MBR50SB140
Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=50A VGE=±15V RG=24Ω IF=50A chip terminal Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.4 2.8 6000 0.35 0.25 0.1 0.45 0.08 2.4 2.6 1.2 0.6 1.0 0.3 V 3.4 0.35 1.0 0.2 2.8 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 µs mA µA V µs Unit mA µA V V pF µs
Min.
Input capacitance Turn-on time
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
Brake
Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
IF=50A VCES=1400V, VGE=0V VCE=0V, VGE=±20V IC=25A, VGE=15V chip terminal V CC =800V IC=25A VGE=±15V RG=51Ω V R=1400V IF=50A chip terminal VR=1600V T=25°C T=100°C T=25/50°C
2.2 2.35 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375
Converter
mA V mA Ω K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.35 0.75 0.69 0.50 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
°C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter] 21(P) [Brake] 22(P1) [Inverter]
20(Gu)
18(Gv)
16(Gw)
1(R)
2(S)
3(T) 7(B)
19(Eu) 4(U)
17(Ev) 5(V)
15(Ew) 6(W)
14(Gb)
13(Gx)
12(Gy)
11(Gz) 10(En)
23(N)
24(N1)
IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 120 120
7MBR50SB140
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.)
100
15V VGE= 20V 12V
100
VGE= 20V 15V 12V
Collector current : Ic [ A ]
80 10V 60
Collector current : Ic [ A ]
80 10V 60
40
40
20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
20
8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
100
Tj= 25°C
Tj= 125°C
80
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
60
4 Ic= 100A 2 Ic= 50A Ic= 25A
40
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 20000 1000
[ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C 25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Cies
Collector - Emitter voltage : VCE [ V ]
800
20
600
15
1000
Coes
400
10
Cres
200
5
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 100 200 300 400 Gate charge : Qg [ nC ]
0 500
IGBT Module
7MBR50SB140
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 24 ohm, Tj= 25°C 1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 24 ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton tr
ton
tr
100
100 tf
tf 50 0 20 40 Collector current : Ic [ A ] 60 80 50 0 20 40 Collector current : Ic [ A ] 60 80
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=±15V, Tj= 25°C 5000 20
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=24 ohm Eon(125°C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
ton toff
18 16 Eon(25°C) 14 12 Eoff(125°C) 10 8 6 4 2 Err(125°C) Err(25°C)
Switching time : ton, tr, toff, tf [ nsec ]
tr 1000
500
Eoff(25°C)
100
tf
50 10
0 50 100 500 0 20 40 60 80 100 Gate resistance : Rg [ ohm ] Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=±15V, Tj= 125°C 40 Eon 120
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
100 30 80
20
60
Eoff 10
40
20 Err 0 10 0 50 100 500 0 200 400 600 800 1000 1200 1400 1600 Gate resistance : Rg [ ohm ]
IGBT Module
7MBR50SB140
[ Inverter ] Forward current vs. Forward on voltage (typ.) 120 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=24 ohm
100
Tj=125°C
Tj=25°C
trr(125°C)
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
80
100 trr(25°C)
60
Irr(125°C)
40
Irr(25°C)
20
0 0 1 2 3 4 Forward on voltage : VF [ V ]
10 0 20 40 Forward current : IF [ A ] 60 80
[ Converter ] Forward current vs. Forward on voltage (typ.) 120
100
Tj= 25°C Tj= 125°C
Forward current : IF [ A ]
80
60
40
20
0 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance 3 200 100 1
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD[Inverter] IGBT[Brake] Conv. Diode IGBT[Inverter] 10
0.1 1
0.01 0.001
0.01
0.1
1
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160 180
Pulse width : Pw [ sec ]
IGBT Module
7MBR50SB140
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 60 60
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.)
50
15V VGE= 20V
12V
50
VGE= 20V 15V 12V
Collector current : Ic [ A ]
40 10V 30
Collector current : Ic [ A ]
40 10V 30
20
20
10 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
10
8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 60 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.)
Tj= 25°C 50
Tj= 125°C
40
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
30
4 Ic= 50A 2 Ic= 25A Ic= 12.5A
20
10
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 1000
[ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=25A, Tj= 25°C 25
Capacitance : Cies, Coes, Cres [ pF ]
Cies
Collector - Emitter voltage : VCE [ V ]
800
20
600
15
1000
400
10
Coes
200
5
Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 50 100 150 200 Gate charge : Qg [ nC ] 0 250
IGBT Module
Outline Drawings, mm
7MBR50SB140
mass : 260g