7MBR50SC060

7MBR50SC060 PIM/Built-in converter with thyristor and brake (S series) 600V / 50A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 ±20 50 100 50 200 600 ±20 30 60 120 600 800 800 50 563 125 800 50 525 1378 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m Brake Inverter Continuous 1ms 1 device Thyristor 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR50SC060 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =300V IC=50A VGE=±15V RG=51Ω IF=50A chip terminal IF=50A VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=30A, VGE=15V chip terminal V CC =300V IC=30A VGE=±15V RG=82Ω V R=600V V DM=800V V RM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=50A chip terminal IF=50A chip terminal V R=800V T=25°C T=100°C T=25/50°C Characteristics Typ. Max. 150 200 5.5 7.8 8.5 1.8 1.95 2.4 5000 0.45 0.25 0.40 0.05 1.75 1.9 1.2 0.6 1.0 0.35 2.6 300 150 200 2.4 1.2 0.6 1.0 0.35 150 1.0 1.0 100 2.5 1.3 Unit µA nA V V pF µs Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns µA nA V µs Brake Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 1.8 1.95 0.45 0.25 0.40 0.05 Thyristor Converter 1.1 1.2 1.1 1.2 5000 495 3375 µA mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 150 520 3450 µA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.63 1.33 1.04 1.00 0.90 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C(typ.) 7MBR50SC060 120 120 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C(typ.) VGE= 20V 15V 100 12V 100 VGE= 20V 15V 12V Collector current : Ic [ A ] 80 Collector current : Ic [ A ] 80 60 60 40 40 10V 20 10V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C(typ.) Tj= 25°C 100 Tj= 125°C 80 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 60 4 40 Ic=100A 2 Ic= 50A Ic= 25A 20 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 20000 [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25°C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 400 20 300 15 1000 200 10 Coes Cres 100 5 100 0 5 10 15 20 25 30 35 0 0 50 100 150 200 250 0 300 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] IGBT Module 7MBR50SC060 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=51Ω, Tj= 25°C 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg= 51Ω, Tj= 125°C toff toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] ton tr ton tr 100 100 tf tf 10 0 20 40 60 80 10 0 20 40 60 80 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=±15V, Tj= 25°C 5000 5 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=51Ω ton Switching time : ton, tr, toff, tf [ nsec ] 1000 toff tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 4 Eon(125°C) Eoff(125°C) Eon(25°C) 3 Eoff(25°C) 2 100 tf 1 Err(125°C) Err(25°C) 10 10 50 100 500 0 0 20 40 60 80 100 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=±15V, Tj= 125°C 10 600 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 500 8 400 6 300 Eoff 4 200 SCSOA (non-repetitive pulse) 2 100 RBSOA Err 0 10 50 100 500 0 0 200 400 600 800 Gate resistance : Rg [ Ω ] IGBT Module 7MBR50SC060 [ Inverter ] Forward current vs. Forward on voltage (typ.) 120 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=51Ω Tj=125°C 100 Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 80 100 trr(125°C) 60 trr(25°C) 40 Irr(125°C) 20 Irr(25°C) 0 0 1 2 3 10 0 20 40 60 80 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 120 200 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tj= 25°C 100 Tj= 125°C 100 Tjw= 125°C Forward current : IF [ A ] 80 60 40 10 5 20 0 0.0 0.4 0.8 1.2 1.6 2.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 5 200 100 FWD[Inverter] [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ °C/W ] 1 IGBT[Brake] Thyristor Conv. Diode IGBT[Inverter] Resistance : R [ kΩ ] 1 10 0.1 1 0.01 0.001 0.01 0.1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ °C ] IGBT Module 7MBR50SC060 70 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C(typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C(typ.) 70 VGE= 20V 15V 60 12V 60 VGE= 20V 15V 12V 50 50 Collector current : Ic [ A ] 40 Collector current : Ic [ A ] 40 30 30 20 20 10V 10V 10 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 70 Tj= 25°C 60 Tj= 125°C 8 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C(typ.) 50 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 6 40 30 4 20 Ic= 60A 2 Ic= 30A Ic= 15A 10 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=30A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 400 20 300 15 1000 200 10 Coes Cres 100 5 100 0 5 10 15 20 25 30 35 0 0 50 100 150 0 200 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] IGBT Module Outline Drawings, mm 7MBR50SC060 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En)