7MBR50VP060-50

7MBR50VP060-50 IGBT MODULE (V series) 600V / 50A / PIM Features Low VCE (sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Brake Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC I CP PC VRRM VRRM IO I FSM I 2t Tj Tjop Tc Tstg AC : 1min. M5 Conditions Maximum ratings 600 ±20 50 100 50 100 200 600 ±20 50 100 200 600 800 50 210 221 175 150 150 150 125 -40 to +125 2500 3.5 Units V V A W V V A W V V A A A 2s Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Continuous 1ms 1 device Tc=80°C Tc=80°C Converter 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter Junction temperature Operating junciton temperature (under switching conditions) Case temperature Storage temperature Isolation voltage Screw torque °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) - VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 7MBR50VP060-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols I CES I GES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current trr I CES I GES VCE (sat) (terminal) Brake Collector-Emitter saturation voltage VCE (sat) (chip) Turn-on time Turn-off time Reverse current Thermistor Converter Forward on voltage Reverse current Resistance B value ton tr toff tf IRRM VFM (chip) IRRM R B VGE = 15V I C = 50A VCE = 300V I C = 50A VGE = +15 / -15V RG = 43Ω VR = 600V I F = 50A VR = 800V T = 25°C T = 100°C T = 25 / 50°C terminal chip I F = 50A I F = 50A VGE = 0V VCE = 600V VCE = 0V VGE = +20 / -20V VGE = 15V I C = 50A Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Conditions VGE = 0V, VCE = 600V VGE = 0V, VGE = ±20V VCE = 20V, I C = 50mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 50A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V I C = 50A VCC = 300V I C = 50A VGE = +15 / -15V RG = 43Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules I F = 50A Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 1.85 2.30 2.15 2.25 1.60 2.05 1.90 2.00 3.3 0.36 1.20 0.25 0.60 0.07 0.52 1.20 0.03 0.45 1.85 2.30 1.75 1.70 1.60 2.05 1.50 1.45 0.35 465 3305 1.85 2.15 2.25 1.60 1.90 2.00 0.36 0.25 0.52 0.03 1.55 1.30 5000 495 3375 1.0 200 2.30 2.05 1.20 0.60 1.20 0.45 1.00 2.00 1.0 520 3450 Units mA nA V V nF µs V µs mA nA V µs mA V mA Ω K Thermal resistance characteristics Items Symbols Conditions Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Characteristics min. typ. max. 0.71 1.15 0.71 1.20 0.05 Units Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 7MBR50VP060-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 100 VGE=20V 15V 100 12V VGE=20V 15V IGBT Modules [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150oC / chip Collector current: I C [A] Collector current: IC [A] 12V 75 75 50 10V 50 10V 25 8V 0 0 1 2 3 4 5 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 100 Tj=25°C Collector-Emitter voltage: VCE[V] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 75 Collector - Emitter voltage: VCE [V] Tj=150°C Collector current: IC [A] Tj=125°C 6 50 4 25 2 Ic=100A Ic=50A Ic=25A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage: VCE[V] [ Inverter ] Capacitance vs. Collector-Emittervoltage(typ.) VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Gate - Emitter voltage: VGE [V] [ Inverter ] Dynamic gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25°C Capacitance: Cies, Coes, Cres [nF] 10.0 Ci e s Cres Coes V GE 1.0 0.1 VCE 0.0 0 10 20 30 0 100 200 300 400 Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC] 3 7MBR50VP060-50 IGBT Modules [ Inverter ] Switching time vs. Collectorcurrent (typ.) Vcc=300V, VGE=±15V, Rg=43Ω, Tj= 125°C 10000 10000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=43Ω, Tj= 150°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton tr 1000 toff tr ton 100 tf 100 tf 10 0 50 100 150 10 0 Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300V, Ic=50A, VGE=±15V, Tj= 125°C toff ton tr 1000 Collector current: IC [A] 50 100 150 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=43Ω Switching loss : Eon, Eoff, Err [mJ/pulse ] 8 Eon(150°C) Eon(125°C) 10000 Switching time : ton, tr, toff, tf [ nsec ] 6 4 Eoff(150°C) Eoff(125°C) 100 tf 2 Err(150°C) Err(125°C) 0 0 50 100 150 10 10 100 1000 Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V, Ic=50A, VGE=±15V Switching loss : Eon, Eoff, Err [mJ/pulse ] 15 Eon(150°C) Eon(125°C) 10 Collector current: IC [A] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 43Ω ,Tj