7MBR75SD060

7MBR75SD060 PIM/Built-in converter with thyristor and brake (S series) 600V / 75A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 ±20 75 150 75 300 600 ±20 50 100 200 600 800 800 75 750 125 800 75 525 1378 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m Brake Inverter Continuous 1ms 1 device Thyristor 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR75SD060 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=75mA VGE=15V, Ic=75A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =300V IC=75A VGE=±15V RG=33Ω IF=75A chip terminal IF=75A VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=±15V RG=51Ω V R=600V V DM=800V V RM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=75A chip terminal IF=75A chip terminal V R=800V T=25°C T=100°C T=25/50°C Characteristics Typ. Max. 200 200 5.5 7.8 8.5 1.8 2.1 2.55 7500 0.45 0.25 0.40 0.05 1.7 2.0 1.2 0.6 1.0 0.35 2.7 300 200 200 2.55 1.2 0.6 1.0 0.35 200 1.0 1.0 100 2.5 1.18 Unit µA nA V V pF µs Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns µA nA V µs Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 1.8 2.05 0.45 0.25 0.40 0.05 Brake Thyristor Converter 1.1 1.2 1.1 1.2 5000 495 3375 µA mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 200 520 3450 µA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.42 0.90 0.63 0.56 0.70 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C(typ.) 7MBR75SD060 200 200 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C(typ.) VGE= 20V 150 15V 12V 150 VGE= 20V 15V 12V Collector current : Ic [ A ] 100 Collector current : Ic [ A ] 100 50 10V 50 10V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 200 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C(typ.) Tj= 25°C 150 Tj= 125°C Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 100 4 50 Ic=150A 2 Ic= 75A Ic= 37.5A 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 30000 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25°C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] 300 15 1000 Coes Cres 200 10 100 5 100 0 5 10 15 20 25 30 35 0 0 100 200 300 400 0 500 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Cies Collector - Emitter voltage : VCE [ V ] 400 20 IGBT Module 7MBR75SD060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33Ω, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg= 33Ω, Tj= 125°C ton toff ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] tr tr 100 100 tf tf 10 0 50 100 150 10 0 50 100 150 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=±15V, Tj= 25°C 5000 8 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33Ω ton Switching time : ton, tr, toff, tf [ nsec ] 1000 toff tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125°C) 6 Eoff(125°C) Eon(25°C) 4 Eoff(25°C) 100 tf 2 Err(125°C) Err(25°C) 10 10 100 300 0 0 50 100 150 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=±15V, Tj= 125°C 15 800 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=33Ω, Tj