7MBR75U2B060

7MBR75U2B060 IGBT MODULE (U series) 600V / 75A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rating 600 ±20 75 150 75 150 255 600 ±20 30 60 133 600 800 75 525 1378 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage V RRM Repetitive peak reverse voltage V RRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Converter Brake Continuous 1ms 1ms 1 device Unit V V A Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute W V V A A W V V A A A 2s °C °C V V N·m *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM IRRM R B Symbol Condition VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=75mA Tj=25°C VGE=15V Tj=125°C Ic=75A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=300V IC=75A VGE=±15V RG=47Ω VGE=0V IF=75A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Min. 6.2 465 3305 7MBR75U2B060 Characteristics Typ. Max. 1.0 200 6.7 7.7 2.20 2.50 2.40 1.85 2.15 5.4 0.42 1.20 0.24 0.60 0.05 0.42 1.20 0.03 0.45 1.95 2.30 2.00 1.60 1.65 0.35 1.0 200 2.00 2.30 2.30 1.85 2.15 0.42 1.20 0.24 0.60 0.42 1.20 0.03 0.45 1.0 1.20 1.50 1.10 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.05 0.49 0.79 0.94 0.66 Unit mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=75A VCE=600V, VGE=0V VCE=0V, VGE=±20V Tj=25°C IC=30A Tj=125°C VGE=15V Tj=25°C Tj=125°C V CC=300V IC=30A VGE=±15V RG=120Ω V R=600V IF=75A VGE=0V V R=800V T=25°C T=100°C T=25/50°C Condition µs mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value µs Converter terminal chip mA V mA Ω K Unit Item Thermistor Thermal resistance Characteristics Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound - Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 175 VGE=20V 15V 12V 150 125 100 10V 75 50 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [ V ] 0 0 1 2 Collector current : Ic [ A ] Colector current : Ic [ A ] 150 125 100 75 50 7MBR75U2B060 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 175 VGE=20V 15V 12V 10V 8V 25 3 4 5 Collector-Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 175 Tj=25°C 150 Collector current : Ic [ A ] 125 100 75 50 25 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] Tj=125°C Collector-Emitter voltage : VCE [ V ] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 6 4 Ic=150A Ic=75A Ic=37.5A 2 0 5 10 15 20 25 Gate-Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10.00 Capacitance : Cies, Coes, Cres [ nF ] Cies 1.00 Coes Cres Collector-Emitter voltage : VCE [ V ] 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25°C 25 400 20 300 VGE 200 15 10 0.10 100 VCE 5 0.01 0 10 20 30 Collector-Emitter voltage : VCE [ V ] 0 0 50 100 150 200 250 300 Gate charge : Qg [ nC ] 0 Gate-Emitter voltage : VGE [ V ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=47Ω,, Tj= 25°C 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff 1000 toff 7MBR75U2B060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=47Ω, Tj=125°C ton tr 100 ton tr 100 tf tf 10 10 0 40 80 120 Collector current : Ic [ A ] 0 40 80 120 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=±15V, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 8 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=47Ω Eon(125°C) Eon(25°C) 6 4 Eoff(125°C) Eoff(25°C) 2 Err(125°C) 0 Err(25° 0 30 60 90 120 150 100 tf 10 10 100 Gate resistance : Rg [ Ω ] 1000 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=±15V, Tj= 125°C 25 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon Collector current : Ic [ A ] 150 200 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 47Ω ,Tj