7MBR75VR120-50

7MBR75VR120-50 IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Brake Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Tj Tjop Tc Tjmax Tjop Tstg AC : 1min. M5 Conditions Maximum ratings 1200 ±20 75 150 75 150 385 1200 ±20 50 100 280 1200 1600 75 520 1352 175 150 150 150 125 175 150 -40 to +125 2500 3.5 Units V V A W V V A W V V A A A2 s Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Continuous 1ms 1 device Tc=80°C Tc=80°C Converter 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter Junction temperature Operating junciton temperature (under switching conditions) Case temperature Maximum junction temperature Operating temperature (under switching conditions) Storage temperature Isolation voltage Screw torque °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) - VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 7MBR75VR120-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols I CES I GES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current trr I CES I GES VCE (sat) (terminal) Brake Collector-Emitter saturation voltage VCE (sat) (chip) Turn-on time Turn-off time Reverse current Thermistor Converter Forward on voltage Reverse current Resistance B value ton tr toff tf IRRM VFM (chip) IRRM R B VGE = 15V I C = 50A VCE = 600V I C = 50A VGE = +15 / -15V RG = 15Ω VR = 1200V I F = 75A VR = 1600V T = 25°C T = 100°C T = 25 / 50°C terminal chip I F = 75A I F = 75A VGE = 0V VCE = 1200V VCE = 0V VGE = +20 / -20V VGE = 15V I C = 50A Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Conditions VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, I C = 75mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 75A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V I C = 75A VCC = 600V I C = 75A VGE = +15 / -15V RG = 2.2Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules I F = 75A Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.25 2.70 2.60 2.65 1.85 2.30 2.20 2.25 6.0 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.10 2.55 2.25 2.20 1.70 2.15 1.85 1.80 0.1 465 3305 2.10 2.45 2.50 1.85 2.20 2.25 0.39 0.09 0.53 0.06 1.80 1.40 5000 495 3375 1.0 200 2.55 2.30 1.20 0.60 1.00 0.30 1.00 2.10 1.0 520 3450 Units mA nA V V nF µs V µs mA nA V µs mA V mA Ω K Thermal resistance characteristics Items Symbols Conditions Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Characteristics min. typ. max. 0.39 0.55 0.54 0.43 0.05 Units Thermal resistance (1device) Contact thermal resistance (1device) (*4) Rth(j-c) Rth(c-f) °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 7MBR75VR120-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 150 VGE=20V 15V 125 100 75 50 25 0 0 1 2 3 4 5 10V 12V 150 VGE=20V 15V 125 100 75 50 25 0 0 1 2 3 4 IGBT Modules [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150oC / chip Collector current: IC [A] Collector current: IC [A] 12V 10V 8V 8V 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 150 125 100 75 50 25 0 0 1 2 3 4 5 Tj=150°C Collector-Emitter voltage: VCE[V] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 Collector - Emitter voltage: VCE [V] Tj=25°C Collector current: IC [A] 6 Tj=125°C 4 2 Ic=150A Ic=75A Ic=38A 0 5 10 15 20 25 Collector current: IC [A] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25oC Capacitance: Cies, Coes, Cres [nF] 100.0 Gate - Emitter voltage: VGE [V] [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25°C Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies VGE 1. 0 Cres Coes 0. 1 VCE 0. 0 0 10 20 30 0 100 200 300 400 500 600 700 Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC] 3 7MBR75VR120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 150°C 10000 1000 t of f ton 1000 t of f ton 100 tr tf 100 tr tf 10 0 25 50 75 100 125 150 175 10 0 25 Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 20 Collector current: IC [A] 50 75 100 125 150 175 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω 15 1000 t of f ton tr Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) 10 Err(150°C) 5 Err(125°C) 100 tf 10 0. 1 1. 0 10.0 100.0 0 0 25 50 75 100 125 150 175 200 Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V Switching loss : Eon, Eoff, Err [mJ/pulse ] 14 12 10 8 6 4 2 0 1 10 100 Err(150°C) Err(125°C) Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) Collector current: IC [A] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 2.2Ω ,Tj