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ERB84-009_01

ERB84-009_01

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    ERB84-009_01 - SCHOTTKY BARRIER DIODE - Fuji Electric

  • 详情介绍
  • 数据手册
  • 价格&库存
ERB84-009_01 数据手册
ERB84-009 (2A) SCHOTTKY BARRIER DIODE (90V / 2A ) Outline drawings, mm ø4.0 ø0.8 25 MIN. 7.5 25 MIN. Marking Features Low VF Super high speed switching High reliability by planer design Voltage class Lot No. Color code : Blue B84 02 009 ··· Abridged type name Cathode mark Applications High speed switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Average forward current Surge current Operating junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Square wave, duty=1/2 Ta=25°C Sine wave 10ms Conditions Rating 90 2.0* 60 -40 to +150 -40 to +150 Unit V A A °C °C * With cooling Cu fin both lead (1t x 20 x 20mm) Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Symbol VFM IRRM Conditions IFM=2.0A VR=VRRM Max. 0.9 2.0 Unit V mA (90V / 2A ) Characteristics Forward Characteristic (typ.) 100 10 2 ERB84-009 (2A) Reverse Characteristic (typ.) Tj=150°C 10 1 Tj=125 °C 10 IR Reverse Current (mA) IF Forward Current (A) 10 0 Tj=100 °C Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 10 -1 10 -2 Tj= 25°C 10 -3 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 10 -4 0 10 20 30 40 50 60 70 80 90 100 110 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 2.4 2.2 2.0 Io Reverse Power Dissipation 5.0 DC 4.5 4.0 VR 360° (W) λ 360° 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Reverse Power Dissipation (W) Forward Power Dissipation 3.5 3.0 2.5 2.0 1.5 1.0 0.5 α Square wave λ =60°C Square wave λ =120°C Sine wave λ=180°C Square wave λ =180°C DC α =180°C WF Per 1element 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 10 20 30 40 50 60 70 80 90 100 PR Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Ta) 2.6 2.4 2.2 2.0 360° λ Io VR=50V Current Derating (Io-Ta) 2.6 2.4 2.2 2.0 DC 1.8 1.6 Square wave λ=120°C 1.4 Square wave λ=60°C 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Sine wave λ =180°C Square wave λ =180°C 360° λ Io VR=50V L=5mm Cu area:1tx20x20mm L=10mm Land an area:5x5mm (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Square wave λ =120°C 0.4 Square wave λ =60°C 0.2 0.0 0 10 20 30 40 50 60 70 80 Sine wave λ =180°C Square wave λ=180°C Average Output Current Io Io Average Output Current DC (A) 90 100 110 120 130 140 150 160 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 Ta Ambient Temperature (°C) Ta Ambient Temperature (°C) (90V / 2A ) ERB84-009 (2A) Current Derating (Io-Ta) 2.6 2.4 2.2 2.0 DC 1.8 Sine wave λ=180°C 1.6 1.4 Square wave λ =120°C 1.2 Square wave λ=60°C 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 Square wave λ=180°C 360° λ Io Current Derating (Io-Tl) 2.4 2.2 2.0 VR=50V L=10mm Land an area:10x10mm (A) Average Output Current VR=50V (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 60 70 80 90 100 110 120 130 140 150 160 DC Sine wave λ =180°C Square wave λ =180°C Square wave λ =120°C Square wave λ =60°C Average Output Current Io Ta Ambient Temperature (°C) Io Tl Lead Temperature (°C) Junction Capacitance Characteristic (typ.) 1000 1000 Surge Capability Junction Capacitance (pF) Peak Half - Wave Current I FSM (A) 100 100 10 Cj 10 1 10 100 1 1 10 100 Number of Cycles at 50Hz VR Reverse Voltage (V) Transient Thermal Impedance 10 2 (°C/W) Transient Thermal Impedance 10 1 10 0 10 -1 10 -2 10 -1 10 0 10 1 10 2 10 3 t Time (sec.)
ERB84-009_01
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,主要应用于工业控制、消费电子等领域。

2. 器件简介:STM32F103C8T6具有高速嵌入式存储器和丰富的I/O端口,适用于需要高性能和低成本的嵌入式系统。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考芯片手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB的闪存和20KB的RAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(如UART、SPI、I2C)等多种功能模块。

6. 应用信息:适用于需要高性能处理能力的嵌入式系统,如工业自动化、医疗设备、智能家居等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。
ERB84-009_01 价格&库存

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