ESAB82-004

ESAB82-004 (5A) SCHOTTKY BARRIER DIODE 10+0.5 0 2.7±0.1 (40V / 5A ) Outline drawings, mm Ø3.6±0.2 4.5±0.2 0 14 -0.5 1.2 3.7±0.2 15±0.2 6.4±0.2 0.4 0.8 2.54 5.08 2.7 Features Low VF Super high speed switching High reliability by planer design JEDEC EIAJ TO-220AB SC-46 Connection diagram Applications High speed power switching 1 2 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Symbol VRRM VRSM Io Non-repetitive peak reverse voltage Average output current Surge current 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 No Tj Tstg IFSM Sine wave 10ms 保led befor new u Conditions e 廃soletdesign. 守 ob Rating 40 48 5.0* 100 -40 to +150 -40 to +150 予n marc 止o 0 機種7. 20 定h 3 Unit V V A A °C °C tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=126°C Operating junction temperature Storage temperature * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=2.0A VR=VRRM Junction to case Max. 0.55 5.0 5.0 Unit V mA °C/W (40V / 5A ) Characteristics Forward Characteristic (typ.) ESAB82-004 (5A) Reverse Characteristic (typ.) Tj=150°C 10 10 1 Tj=125°C Forward Current (A) Reverse Current (mA) 10 0 Tj=100°C Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 10 -1 IF IR 10 -2 Tj=25°C 0.1 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -3 0 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 3.5 2.0 Io 360° λ 360° VR Reverse Power Dissipation 3.0 Forward Power Dissipation 2.5 1.5 2.0 Square wave λ =160°C Square wave λ =120°C Sine wave λ=180°C DC 1.5 Square wave λ =180°C 1.0 0.5 0.0 0.0 2h T 160 150 3月 7年 00 0.5 1.0 1.5 2.0 2.5 Io . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p 1.0 0.5 Per 1element WF PR 守廃 保 0.0 0 10 Reverse Power Dissipation α 予n marc 止o α =180°C 0 機種7. 20 定h DC (W) 3.0 (W) 20 30 40 50 Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 1000 Junction Capacitance Characteristic (typ.) (°C) DC 130 Sine wave λ =180°C Square wave λ =180°C Square wave λ =120°C 120 Junction Capacitance (pF) CJ 8 140 Case Temperature 100 110 360° λ Io VR=30V Square wave λ =60°C TC 100 90 80 0 1 10 2 3 4 5 6 7 10 100 IO Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (40V / 5A ) Surge Capability 1000 ESAB82-004 (5A) Peak Half - Wave Current IFSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 Transient Thermal Impedance 10 1 10 0 10 -1 10 -3 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 10 -2 保led befor new u 10 1 e 廃soletdesign. 守 ob 10 2 予n marc 止o 0 機種7. 20 定h (°C/W) 10 -1 10 0 t Time (sec.) No