ESAC33MD

ESAC33M(C,N,D) (8A) FAST RECOVERY DIODE 10.5 Max. 6.0 4.7 (200V / 8A) Outline drawings, mm Ø3.2+0.2 -0.1 4.5Max. 2.0 3.7 1.2 13.0 0.8 2.54 2.7 Min. 17.0±0.3 0.4 Features Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ 5.08 SC-67 Connection diagram 2 ESAC33MC 1 2 ESAC33MN 1 2 3 3 Applications High speed switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions ESAC33M- D 1 3 Rating -02 200 200 Unit V V A A °C °C Square wave, duty=1/2, Tc=95°C Sine wave 10ms 8* 30 -40 to +150 -40 to +150 *Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) Conditions IFM=2.0A VR=VRRM IF=0.1A, IR=0.1A Junction to case Max. 1.4 500 100 3.5 Unit V µA ns °C/W (200V / 8A ) Characteristics Forward characteristics 10 10 5 3 1.0 ESAC33M(C,N,D)(8A) Reverse characteristics IF [A] 1 0.5 IR [µA] 0.1 0.01 0.005 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 100 200 300 VF [V] VR [V] Forward power dissipation 12 140 10 8 120 Output current-case temperature WF 6 [W] 4 2 Tc [°C] 100 80 60 0 0 1 2 3 4 5 6 0 2 4 6 8 10 Io [A] Io [A] Junction capacitance characteristics 100 30 50 30 Surge capability Cj [pF] 10 10 IFSM [A] 5 3 5 3 5 10 30 50 100 1 1 3 5 10 30 VR [V] [time] (at 50Hz) (200V / 8A ) Transient thermal impedance 1 01 ESAC33M(C,N,D)(8A) [°C/W] 100 10-1 10-3 10-2 10-1 10 0 1 01 10 2 t [sec.]