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ESAC82-006

ESAC82-006

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    ESAC82-006 - SCHOTTKY BARRIER DIODE - Fuji Electric

  • 数据手册
  • 价格&库存
ESAC82-006 数据手册
ESAC82-006 (10A) SCHOTTKY BARRIER DIODE 10+0.5 0 2.7±0.1 (60V / 10A ) Outline drawings, mm Ø3.6±0.2 4.5±0.2 0 14 -0.5 1.2 3.7±0.2 15±0.2 6.4±0.2 0.4 1 2 3 0.8 2.54 5.08 2.7 Features Low VF Super high speed switching High reliability by planer design JEDEC EIAJ TO-220AB SC-46 Connection diagram Applications High speed power switching 1 2 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Symbol VRRM VRSM Io Non-repetitive peak reverse voltage Average output current Surge current 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 No Tj Tstg IFSM Sine wave 10ms 保led befor new u Conditions e 廃soletdesign. 守 ob Rating 60 60 10* 80 -40 to +150 -40 to +150 予n marc 止o 0 機種7. 20 定h 3 Unit V V A A °C °C tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=123°C Operating junction temperature Storage temperature * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Themal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=4.0A VR=VRRM Junction to case Max. 0.58 5 3.0 Unit V mA °C/W (60V / 10A ) Characteristics Forward Characteristic (typ.) 100 10 2 ESAC82-006 (10A) Reverse Characteristic (typ.) Tj=150°C 10 1 Tj=125°C (mA) (A) 10 Tj=150°C Tj=125°C Tj=100°C Tj=25°C Tj=100°C 10 0 Forward Current Reverse Current IR 1 10 -1 IF Tj=25°C 10 -2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 6.0 5.5 Io Reverse Power Dissipation 10 360° (W) λ 360° (W) 5.0 4.5 8 VR Forward Power Dissipation 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 Square wave λ =60° Square wave λ =120° Sine wave λ =180° Square wave λ =180° DC Reverse Power Dissipation α 6 2 his pr Io d 3月chemmend 年ct is rseco 07 odu t 0 2 Per 1element 5 保led befor new u PR 0 0 10 20 e 廃soletdesign. 守 ob 4 予n marc 止o 30 40 50 60 0 機種7. 20 定h DC α=180° WF 1 2 3 4 70 Average Forward Current (A) VR Reverse Voltage (V) T No Current Derating (Io-Tc) 1000 Junction Capacitance Characteristic (typ.) 160 150 140 (°C) 130 Case Temperature 120 Sine wave λ =180° Square wave λ =180° Square wave λ =120° Junction Capacitance Cj DC (pF) 100 360° λ Io VR=30V 110 Square wave λ =60° 100 Tc 90 80 0 2 4 6 8 10 12 14 10 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (60V / 10A ) Surge Capability 1000 ESAC82-006 (10A) Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 (°C/W) Transient Thermal Impedance 10 1 10 0 10 -1 10 -3 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 10 -2 10 -1 10 0 t Time (sec.) 保led befor new u 10 1 e 廃soletdesign. 守 ob 10 2 予n marc 止o 0 機種7. 20 定h No
ESAC82-006 价格&库存

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