ESAC87M-009R

ESAC87M-009R (16A) SCHOTTKY BARRIER DIODE 15.5 ±0.3 (90V / 16A ) Outline drawings, mm 5.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9.3 ±0.3 3.2 +0.3 2.3 ±0.2 2.1±0.3 1.6 ±0.3 1.1 —0.1 +0.2 20 Min 21.5 ±0.3 5.45 ±0.2 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2. Drain 3. Source Connection diagram Applications High speed power switching 1 2 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Symbol VRRM VRSM V iso Io Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current 2 his T d 3月chemmend 年ct is rseco 07 odu t 0 pr No Terminals-to-case, AC. 1min. 保led befor new u Conditions e 廃soletdesign. 守 ob Rating 90 100 1500 16* 100 -40 to +150 -40 to +150 予n marc 止o 0 機種7. 20 定h 3 Unit V V V A A °C °C tw=500ns, duty=1/40 IFSM Tj Tstg Square wave, duty=1/2 Tc=115°C Sine wave 10ms Operating junction temperature Storage temperature * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=6A VR=VRRM Junction to case Max. 0.9 10 2.0 Unit V mA °C/W (90V / 16A ) Characteristics Forward Characteristic (typ.) 100 10 3 ESAC87M-009R (16A) Reverse Characteristic (typ.) Tj=150 C 10 2 o Tj=125 C o (mA) 10 10 1 Tj=100 C o (A) Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1 o o o o Reverse Current Forward Current 10 0 10 -1 Tj= 25 C o IR 10 -2 IF 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -3 0 10 20 30 40 50 60 70 80 90 100 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 13 12 11 Io Reverse Power Dissipation 28 26 24 360° VR 10 9 8 7 6 5 4 3 λ 360° 22 20 18 16 14 12 10 8 6 4 2 0 Reverse Power Dissipation Forward Power Dissipation α Square wave λ =60 o Square wave λ=120 o Sine wave λ =180 Square wave λ=180 o o DC 2 1 0 0 1 2 his pr Io d 3月chemmend 年ct is rseco 07 odu t 0 Per 1element 7 8 2 3 4 5 6 9 保led befor new u PR 0 10 20 30 40 e 廃soletdesign. 守 ob 予n marc 止o 50 60 70 80 90 0 機種7. 20 定h DC α =180 o WF (W) (W) 100 Average Forward Current T No (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 1000 Junction Capacitance Characteristic (typ.) 160 150 140 C) o 130 Case Temperature 120 Square wave λ =180 110 Sine wave λ =180 o o Junction Capacitance Cj 24 DC ( (pF) 100 Square wave λ =120 100 360° λ Io o 90 Tc Square wave λ =60 VR=50V o 80 70 0 2 4 6 8 10 12 14 16 18 20 22 10 10 100 Io Average Output Current (A) λ :Conduction angle of forward current for each rectifier element VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (90V / 16A ) Surge Capability 1000 ESAC87M-009R (16A) Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 1 Transient Thermal Impedance 10 0 10 -1 10 -3 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 10 -2 保led befor new u 10 1 e 廃soletdesign. 守 ob 10 2 予n marc 止o 0 機種7. 20 定h ( o C/W ) 10 -1 10 0 t Time (sec.) No