ESAD39MN

ESAD39M(C,N,D) (10A) FAST RECOVERY DIODE (400V to 600V / 10A) Outline drawings, mm 15.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9.3 ±0.3 5.5 ±0.3 3.2 +0.3 2.3 ±0.2 2.1±0.3 1.6 ±0.3 1.1 —0.1 +0.2 20 Min 21.5 ±0.3 5.45 ±0.2 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 Features Insulated package by fully molding Super high speed switching Low VF in turn on High reliability JEDEC EIAJ 1. Gate 2. Drain 3. Source Connection diagram 2 ESAD39MC 1 2 ESAD39MN 1 2 3 3 Applications High speed power switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions ESAD39M- D 1 3 Rating -04 400 400 -06 600 600 1500 10* 50 -40 to +150 -40 to +150 Unit V V V A A °C °C Terminals-to-case, AC. 1min. Square wave, duty=1/2, Tc=85°C Sine wave 10ms *Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM t rr Rth(j-c) IFM=4A VR=VRRM IF=0.1A, IR=0.2A, Irec=0.05A Junction to case Conditions Max. 2.5 100 50 2.5 Unit V µA ns °C/W (400V to 600V / 10A ) Characteristics Forward characteristics 30 ESAD39M(C,N,D)(10A) Reverse characteristics 10 5 100 IF [A] 3 IR 10 [µA] 1 0.5 0.3 0.1 0.1 1 0 2 4 6 0 200 400 600 VF [V] VR [V] Forward power dissipation 20 140 15 Output current-case temperature 120 W F 10 [W] 5 Tc [°C] 100 80 60 0 0 2 4 6 8 10 0 2 4 6 8 10 Io [A] Io [A] Junction capacitance characteristics 100 50 30 50 30 100 Surge capability Cj [pF] 10 5 3 IFSM [A] 10 1 3 5 10 30 50 100 300 5 1 3 5 10 VR [V] [time] (at 50Hz) (400V to 600V / 10A ) ESAD39M(C,N,D)(10A) Transient thermal impedance 101 [°C/W] 1 00 10-1 10-3 10-2 10-1 100 10 1 102 t [sec.]