ESAD92M-03RR

T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ir d par t y n or u s e d f or t he m an uf ac tur ing p urp os e s w ith ou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . DATE CHECKED FEB.-20-‘ 07 S P E C I F I C AT I O N DWG.NO. CHECKED FEB. -20-‘ 07 DRAWN FEB. -20-‘ 07 NAME Spec. No. Type Name Device Name APPROVED ： MS5D3003 ： SILICON DIODE ： ESAD92M-03RR Fuji Electric Device Technology Co.,Ltd. MS5D3003 1/12 H04-004-07b T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . Date FEB.-20 -2007 Classification Enactment Ind. ― ―――――― Content Revised DWG.NO. Fuji Electric Device Technology Co.,Ltd. Applied date Issued date Drawn Records MS5D3003 Checked 2/12 Approved H04-004-06b 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE ESAD92M-03RR 2. OUT VIEW , MARKING , MOLDING RESIN , CHARACTERISTICS (1) Out view is shown (2) Marking is shown (3) Molding resin Epoxy resin UL:V-0 MS5D3003 10/12～12/12 Indispensable description items are shown as below. (4) Characteristics is shown MS5D3003 MS5D3003 9/12 9/12 It is marked to type name or abbreviated type name, polarity and Lot No. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . Bar Code Label of EIAJ C-3 Specification. (1) Type Name (2) Production Code (3) Quantity (4) Lot №(Date code) (5) Company Code 3. RATINGS 3.1 MAXIMUM RATINGS ITEM Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive forward surge current** Operating junction temperature Storage temperature * (at Ta=25℃ unless otherwise specified.) SYMBOL VRRM Viso Io IFSM Tj Tstg Out put current of center tap full wave connection. Rating per element Terminals-to-Case,AC.1min 50Hz Square wave duty =1/2 Tc = 96℃ Sine wave, 10ms 1shot CONDITIONS RATINGS 300 1500 20* 80 150 -40～+150 UNITS V V A A ℃ ℃ ** 3.2 ELECTRICAL (at Ta=25℃ ITEM Forward voltage *** Reverse current *** Reverse recovery time*** Thermal resistance unless otherwise specified.) SYMBOL VF IR trr Rth(j-c) *** Rating per element CONDITIONS IF = 10A VR = VRRM IF=0.1A,IR=0.2A,Irec=0.05A Junction to case MAXIMUM 1.2 200 0.04 2.0 UNITS V μA μs ℃/W 3.3 MECHANICAL CHARACTERISTICS Mounting torque Approximate mass Recommended torque 0.4～0.6 6 N･m g Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS5D3003 3/12 H04-004-03a 4. TEST AND INSPECTION 4.1 STANDARD TEST CONDITION Standard test condition is Ta=25℃、65%R.H. If judgment is no doubt, the test condition is possible to test in normal condition Ta=5～35℃、48～85%R.H. 4.2 STRUCTURE INSPECTION It inspect with eye and measure, Item 2 shall be satisfied. 4.3 FORWARD AND REVERSE CHARACTERISTICS It inspect on the standard condition, Item 3.2 shall be satisfied. 4.4 TEST Reference Test No. 1 T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . Test Items Testing methods and Conditions Standard EIAJ ED4701 Sampling number Acceptance number Terminal Strength (Tensile) Pull force : 25N Force maintaining duration :10±1s EIAJ ED4701/401 method 1 5 2 Terminal Strength (Bending) Load force : 10N Number of times : 2times(90deg./time) EIAJ ED4701/401 method 3 EIAJ ED4701/402 method 2 EIAJ ED4701/403 test code D 5 3 Mounting Strength Screwing torque value:(M3) : 50±10N・cm 5 4 Vibration Frequency : 100Hz to 2kHz Acceleration : 100m/s 2 Sweeping time : 4min./1 cycle Mechanical test 5 4times for each X, Y&Z directions. 5 Shock Peak amplitude : 15km/s Duration time : 0.5ms 3times for each X, Y&Z directions. 6 Solder ability 1 Solder : Sn-37Pb Solder temp. : 235±5℃ Immersion time : 5±0.5s Apply to flux Solder ability 2 Solder : Sn-3Ag-0.5Cu Solder temp. : 245±5℃ Immersion time : 5±0.5s Apply to flux 7 Resistance to Soldering Heat Solder temp. : 260±5°C Immersion time : 10±1s Number of times : 1times EIAJ ED4701/302 test code A 2 EIAJ ED4701/404 test code D EIAJ ED4701/303 test code A 5 (0 : 1) 5 5 5 Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS5D3003 4/12 H04-004-03a Test No. 1 Test Items High Temp. Storage Reference Testing methods and Conditions Standard EIAJ ED4701 Temperature :Ｔstg max Test duration : 1000h Temperature :Ｔstg min Test duration : 1000h Temperature : 85±2°C Relative humidity : 85±5% Test duration : 1000h Temperature : 85±2°C Relative humidity : 85±5% Bias Voltage : VRRM× 0.8 Test duration : 1000h EIAJ ED4701/103 test code C EIAJ ED4701/202 EIAJ ED4701/201 Sampling number Acceptance number 22 2 Low Temp. Storage 22 3 Temperature Humidity Storage EIAJ ED4701/103 test code C 22 4 Temperature Humidity Bias 22 5 T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . Unsaturated Pressurized Vapor Temperature : 130±2°C Relative humidity : 85±5% Vapor pressure : 230kPa Test duration : 48h EIAJ ED4701/103 test code F 22 E n d u ra n c e t e s t 6 Temperature Cycle High temp. side : Tstg max Room temp. : 5～35℃ Low temp. side : Tstg min Duration time : HT 30min,RT 5min LT 30min Number of cycles : 100 cycles EIAJ ED4701/105 (0 : 1) 22 7 Thermal Shock Fluid : pure water(running water) High temp. side : 100+0/-5°C Low temp. side : 0+5/-0°C Duration time : HT 5min,LT 5min Number of cycles : 100 cycles EIAJ ED4701/307 test code A 22 8 Steady state Operating life Ta=25±5°C Rated load Test duration : 1000h Tj=Tjmax ～50℃ 3min ON, 3min OFF Test duration : 10000cycles Temperature : Ta=100 °C Bias Voltage : VR=VRRM duty=1/2 Test duration : 1000h EIAJ ED4701/101 EIAJ ED4701/106 22 9 Intermittent Operating life 22 10 High Temp. Reverse Bias 22 Failure Criteria IR ≦USL x 5 VF≦USL x 1.1 USL : Upper specification Limit Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS5D3003 5/12 H04-004-03a 5.Cautions ・Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. ・ The products described in this specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ・Computers ・OA equipment ・Measurement equipment ・Electrical home appliances ・Communications equipment (Terminal devices) ・Machine tools ・Personal equipment ・AV equipment ・Industrial robots etc. ・The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . ・Transportation equipment (automobiles, trains, ships, etc.) ・Backbone network equipment ・Gas alarms, leakage gas auto breakers ・Nuclear control equipment etc. ・Do not use the products in this Specification for equipment requiring strict reliability such as (but not limited to): ・Aerospace equipment ・Aeronautical equipment 6.Warnings ・ The Diodes should be used in products within their absolute maximum rating (voltage, current, temperature, etc. ). The diodes may be destroyed if used beyond the rating. ・ The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc…). ・Use the Diodes within their reliability and lifetime under certain environments or conditions. The Diodes may fail before the target lifetime of your products if used under certain reliability conditions. ・You must design the Diodes to be operated within the specified maximum ratings (voltage, current, temperature, etc. ) to prevent possible failure or destruction of devices. ・Consider the possible temperature rise not only for the junction and case, but also for the outer leads. ・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to avoid electric shock and burns. ・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame. Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke or flame in case the Diodes become even hotter during operation. Design the arrangement to prevent the spread of fire. ・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas. (hydrogen sulfide, sulfurous acid gas.) ・The Diodes should not used in an irradiated field since they are not radiation proof. ・Traffic-signal control equipment ・Submarine repeater equipment ・Burglar alarms, fire alarms, emergency equipment ・Medical equipment Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS5D3003 6/12 H04-004-03a Installation ・Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Table 1: Solder temperature and duration Solder Method Duration temperature Flow 260±5℃ 10±1sec Soldering iron 350±10℃ 3.5±0.5sec ・The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. ・When flow-soldering, be careful to avoid immersing the package in the solder bath. ・Refer to the following torque reference When mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . Table 2:Recommended tightening torque Package style Screw Recommended tightening torque 0.4～0.6N・m ・The heat sink should have a flatness within ±30μm and roughness within 10μm. Also, keep TO-3PF M3 the tightening torque within the limits of this specification. ・Improper handling may cause isolation breakdown leading to a critical accident. ・We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage ・The Diodes must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45 to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. ・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is steady. ・The Diodes should not be stored on top of each other, since this may cause excessive external force on the case. ・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to go fail during later processing. ・The Diodes should be stored in antistatic containers or shipping bags. Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS5D3003 7/12 H04-004-03a 7.Appendix ・ This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. ・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘l nAr Ce ai A t f S law. co U ’ ・If you have any questions about any part of this Specification, please contact Fuji Electric Device Technology or its sales agent before using the product ・Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. ・The application examples described in this specification are merely typical uses of Fuji Electric DeviceTechnology products. This specification does not confer any industrial property rights or other rights, nor constitute a T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . license for such rights. Fuji Electric Device Technology Co.,Ltd. DWG.NO. MS5D3003 8/12 H04-004-03a T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . DWG.NO. Fuji Electric Device Technology Co.,Ltd. Sn-Cu dipping(Pb＜1000ppm) MS5D3003 9/12 H04-004-03a T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . WF Forward Power Dissipation (W) IF Forward Current (A) 10 12 14 0 2 4 6 8 0.1 10 0 1 0.0 2 0.2 I0 Square wave  60° = Io 0.4 λ 4 360° 0.6 VF Forward Voltage (V) 6 0.8 8 Tj=150°C 1.0 10 Forward Power Dissipation (max.) Average Forward Current (A) 1.2 Forward Characteristic (typ.) DC 1.4 Per 1element Square wave  120° = Sine wave  180° = Square wave  180° = Tj=25°C Tj=125°C 12 1.6 DWG.NO. 0 50 Fuji Electric Device Technology Co.,Ltd. ( W) 10 10 1.6 1.8 2.0 2.2 2.4 -3 -2 PR 1.4 Reverse Power Dissipation ＩR Re ver se Cur ren t 10 -1 （ｍ Ａ ） 10 10 10 0 1 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VR α 100 360° VR 100 ＶR 150 200 MS5D3003 Reverse Power Dissipation (max.) DC Reverse Characteristic Reverse Voltage 250 Reverse Voltage 200 (V) 300 10/12 （Ｖ） (typ.)  180° = Tj=25°C Tj=75°C 350 Tj=100°C Tj=125°C Tj=150°C 300 400 H04-004-03a T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . ‚S F h M P a H l Wa eC r n () e k a - v ur t A f e 100 110 120 130 140 10 20 30 40 50 60 70 80 90 0 Tc 100 60 80 0 Case Temperature (°C ) 150 20 40 1 5 Sine wave  180° = Square wave  120° = Square wave  60° = Square wave  180° = 10 2 Surge Capability (max.) 3 15 20 4 5 Current Derating (Io-Tc) (max.) Number of Cycles at 50Hz 6 DC 7 8 9 10 DWG.NO. Fuji Electric Device Technology Co.,Ltd. Io Average Output Current (A) ƒ É o d co a g o fr adc r n fr a hrcf r l e t : n u t n n l fow r ur to e c e te e m n C i e e i ie Io:Output current of center-tap full wave connection Cj Junction Capacitance (pF) 10 50 VR 100 MS5D3003 Reverse Voltage (V) 150 Junction Capacitance Characteristic (typ.) 11/12 200 250 300 H04-004-03a T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of F u j i E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . Transient Thermal Impedance 10 0 10 1 10-1 10 -3 10 -2 10-1 (°C/W) 10 2 t Transient Thermal Impedance (max.) DWG.NO. 10 0 Fuji Electric Device Technology Co.,Ltd. Time (sec) 101 Rth j-c:2.0°C/W MS5D3003 102 12/12 H04-004-03a