ESJA08-08

ESJA08-08 HIGH VOLTAGE DIODE ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Lot No. (8kV/5mA) Outline Drawings : mm Cathode Mark o 2.5 o 0.5 Features High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 27 min. 6.5 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) ESJA08-08 57 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols RRM arc m V 8n Repetitive Peak Renerse Voltage kV o te gn. e5 I Ta=25°C,Resistive Load o Average Output Current mA s l desi ob w 10mS Sine-half e b wave e I 0.5 Suege Current A peak value led for n du nd T che 120 Junction Temperature °C e s s omm i 100 Allowable Operation Case Temperature °C uct tTcrec do o r NT Storage Temperature s -40 to +120 °C ip h T Condition ESJA08-08 O 2 3月 7年 00 FSM j stg 守廃 保 予 止 0 機種7. 20 定h White Units peak Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Maximum Reverse Recovery Time Junction Capacitance trr Cj Conditions at 25°C,IF=10mA at 25°C,VR=8kV at 100°C,VR=8kV at 25°C,IF=2mA,IR=4mA at 25°C,VR=0V,f=1MHz ESJA08-08 28 2 5 0.05 2 Units V µA µA µs pF ESJA08-08 Characteristics (8kV/5mA) Forward characteristic (VF-IF) Typical 10 30 Reverse characteristic (VR-IR) Toil=100°C Typical Ta=25°C 25 1 IF (mA) 20 15 0.1 10 5 0.01 10 15 20 25 30 35 40 45 2 3 4 5 6 IR (µA) VF (V) VR (kV) Avalanche characteristic (Vz-Iz) Typical Ta=25°C 100 130 120 110 100 Reverse recovery time characteristic (Ta-trr) 10 2 his pr T 1 8 9 10 11 d 3月chemmend 年ct is rseco 07 odu t 0 trr (ns) 90 80 70 60 50 40 30 保led befor new u e 廃soletdesign. 守 ob IF/IR=2/4mA 75%Recovery 予n marc 止o Typical 0 機種7. 20 定h 7 8 Iz [µA] No 12 13 14 15 16 50 60 70 80 90 100 110 120 130 Vz [kV] T a (°C)