ESJC35-08
HIGH VOLTEGE DIODE
ESJC35 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
Ø 0.78
(8.0kV/410mA )
O utline
Cathode Mark
Drawings
Type Name, Lot No. Ø 4.0
27MIN.
7.5
27MIN.
Unit : mm
Features
Low VF High reliability . High speed switching
Cathode Mark
Cathode Mark (White)
Applications
Rectification for X-ray generator high voltage power supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items Repetitive Peak Reverse Voltage Average Forward Current Non-repetitive Peak Forward Current Allowable Junction Temperature Storage Temperature Range Symbols VRRM Io IFSM Tj Tstg Toil=25°C, Resistive Load
50Hz.sine harf-wave peak value. One-shot.Ta=25°C
Conditions
ESJC35-08 8.0 410 10 120 -40 to +120
Units kV mA A °C °C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Minimum Reverse Recovery Time trr Conditions at 25°C, IF=1A at 25°C, VR=8.0kV ESJC35-08 20 2 10 0.15 µs Units V µA
at 100°C, VR=8.0kV at 25°C, IF=IR=100mA 90%Recovery
ESJC35 (8.0kV/410mA )
Characteristics
Forward characteristic [VF-IF]
Typical
1000 10
Reverse characteristic [VR-IR]
Typical
Toil=100°C
Ta=25°C
1
IF (mA)
IR (µA)
0.1 0 5 10 15 20 0.01 2 3 4 5 6 7 8
100
10
VF (V)
VR (kV)
Avalanche characteristic [Vz-Iz]
Typical
400
Reverse recovery time characteristic [Ta-trr]
Typical
IF/IR=100/100mA 90% recovery
350
Ta=25°C
100
300
Iz (µA)
10
trr (ns)
250
200
150
100
1
50 20 40 60 80 100
7
8
9
10
11
12
Vz (kV)
Ta (°C)
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