FMI07N50E

FMI07N50E Features FUJI POWER MOSFET Super FAP-E3 series Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability T-Pack(L) N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±6.5 ±26 ±30 6.5 266 9.0 5.4 100 1.67 90 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µA, VGS =0V I D =250 µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ±30V, VDS =0V I D =3.3A, VGS =10V I D =3.3A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =3.3A RG =10Ω Vcc =250V I D =6.5A VGS =10V L=4.61mH, Tch=25°C I F =6.5A, VGS =0V, Tch =25°C I F =6.5A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 3.5 6.5 typ. 3.0 10 0.73 7 1050 95 7 11 7 75 14 32 8 9 0.86 0.34 3.0 max. 3.5 25 250 100 0.85 1575 142.5 10.5 16.5 10.5 113 21 48 12 13.5 1.30 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 1.390 75.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =2.6A, L=72.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc ≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=5.4kV/µs, Vcc ≤BVDSS, Tch≤150°C. 1 FMI07N50E Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c 10 2 FUJI POWER MOSFET 120 100 10 80 1 t= 1µs 10µs 100µs PD [ W ] I D [ A] 60 10 0 1m s -1 40 10 20 P o w e r lo s s w a v e f o r m : S q u a r e w a v e fo r m PD t 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 DC 10 -1 10 0 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 18 10 1 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 15 10V 6 .0 V 10 0 12 I D [ A] ID[A] 5 .0 V 9 10 -1 6 10 -2 4 .5 V 3 10 -3 VGS=4.0V 0 0 4 8 12 VDS [V] 16 20 24 10 -4 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.0V 4.5V 5V 1.4 6V 10V 10 1 RDS(on) [ Ω ] 1.2 gf s [ S] 1.0 0.1 0.8 0.01 0.01 0.1 1 ID [A] 10 100 0.6 0 4 8 ID [A] 12 16 20 2 FMI07N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.3A,VGS=10V FUJI POWER MOSFET 3.0 6 Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 2.5 5 VGS(th) [V] 2.0 RDS(on) [ Ω ] 4 m ax. 3 typ. 1.5 max. typ. 2 1.0 min. 0.5 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=6.5A,Tch=25 °C 20 18 16 14 12 VG S [ V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 4 10 Vcc= 120V C [pF] 3 Ciss 10 8 6 4 2 0 0 10 20 300V 480V 10 2 Coss 10 1 Crss 30 40 50 60 70 10 0 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=22 Ω 10 10 2 td(off) I F [ A] t [ns] 1 tf 10 0.1 1 td(on) tr 0.01 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 10 1 ID [A] 3 FMI07N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)