FMI10N60E

FMI10N60E Features FUJI POWER MOSFET Super FAP-E3 series Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability T-Pack(L) N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 600 600 ±10 ± 40 ± 30 10 416 16.5 4.4 100 1.67 165 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =5A, VGS =10V I D =5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =5A RG =15Ω Vcc =300V I D =10A VGS =10V L=3.05mH, Tch =25°C I F =10A, VGS =0V, Tch =25°C I F =10A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 600 2.5 6 10 typ. 3.0 10 0.675 12 1800 140 10.5 20 9 100 18 47 10.5 13.5 0.86 0.51 5.4 max. 3.5 25 250 100 0.79 2700 210 16 30 13.5 150 27 70.5 16 20 1.30 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.758 75.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =4A, L=47.7mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.4kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMI10N60E Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c FUJI POWER MOSFET 200 180 160 140 120 PD [W] 10 2 t= 1µs 10µs 100µs 10 1 ID [A] 100 80 60 40 20 0 0 25 50 75 Tc [°C] 100 125 150 10 0 1ms 10 -1 P o w e r l o s s wa v e fo r m : S q u a re w a v e f o r m PD t 10 -2 DC 0 10 -1 10 10 VDS [V] 1 10 2 10 3 20 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 2 0V 1 0V 6 .0V 5 .0V 10 0 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 1 10 15 ID [A] ID[A] 10 10 -1 4 .5V 5 10 -2 10 -3 VGS=4.0V 0 0 5 10 VDS [V] 15 20 10 -4 2 3 4 VGS[V] 5 6 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.3 1.2 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.0V 4.5V 5V 10 1.1 1.0 0.9 0.8 0.7 0.6 6V 10V 20V 1 0.1 RDS(on) [ Ω ] gfs [S] 0.01 0.01 0.5 0.1 1 ID [A] 10 100 0 5 10 ID [A] 15 20 2 FMI10N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V FUJI POWER MOSFET 2.5 6 Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 2.0 5 RDS(on) [ Ω ] 1.5 max. 1.0 typ. VGS(th) [V] 4 m ax. 3 typ. 2 min. 0.5 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 20 18 16 14 12 VGS [V] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 4 Vcc= 120V 300V C [pF] Ciss 10 3 480V 10 8 6 4 2 0 0 10 20 30 40 Qg [nC] 50 60 70 80 10 2 Coss 10 1 Crss 10 0 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω 10 10 2 td(off) tf IF [A] t [ns] 1 td(on) 10 1 tr 0.1 0.01 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 ID [A] 10 1 10 2 3 FMI10N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)