FMI12N50E

FMI12N50E Features FUJI POWER MOSFET Super FAP-E3 series Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability T-Pack(L) N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ±12 ±48 ±30 12 400 16.5 6.5 100 1.67 165 150 -55 to +150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µA, VGS =0V I D =250 µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ±30V, VDS =0V I D =6A, VGS =10V I D =6A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =6A RG =15Ω Vcc =300V I D =12A VGS =10V L=2.12mH, Tch=25°C I F =12A, VGS =0V, Tch =25°C I F =12A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 6.5 12 typ. 3.0 10 0.444 13 1600 160 11.5 20 9 100 18 47 10.5 14 0.88 0.36 4.1 max. 3.5 25 250 100 0.52 2400 240 17.5 30 13.5 150 27 70.5 16 21 1.32 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.758 75.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =5A, L=29.2mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc ≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=6.5kV/µs, Vcc ≤BVDSS, Tch≤150°C. 1 FMI12N50E Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c 10 2 FUJI POWER MOSFET 200 180 160 140 120 PD [W] t= 1µs 10µs 100µs 10 1 ID [A] 100 80 60 40 20 0 0 25 50 75 Tc [°C] 100 125 150 10 0 1ms 10 -1 P o w e r lo s s w a v e f o r m : S q u a re w a v e f o r m PD t DC 0 10 -2 10 -1 10 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 20 18 16 14 12 ID [A] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 2 0V 1 0V 6 .0V 5.0V 10 1 10 0 ID[A] 10 8 6 4 2 0 0 2 4 6 8 VDS [V] 10 12 14 10 -1 10 -2 4.5V 10 -3 VGS=4.0V 10 -4 2 3 4 VGS[V] 5 6 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.9 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.0V 4.5V 5V 0.8 10 0.7 RDS(on) [ Ω ] gfs [S] 1 6V 0.6 10V 20V 0.5 0.1 0.4 0.01 0.01 0.3 0.1 1 ID [A] 10 100 0 5 10 ID [A] 15 20 2 FMI12N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V FUJI POWER MOSFET 1.6 1.4 1.2 1.0 RDS(on) [ Ω ] 6 Gate T hreshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 5 VGS(th) [V] 4 m ax. 3 typ. 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 max. typ. 2 min. 1 0 50 Tch [°C] 75 100 125 150 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25 °C 20 18 16 14 12 VGS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 4 Vcc= 100V 250V 400V Ciss 10 C [pF] 3 10 8 6 4 2 0 0 10 20 30 40 Qg [nC] 50 60 70 80 10 2 Coss 10 1 Crss 10 0 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω 10 10 2 td(off) tf IF [A] t [ns] 1 td(on) 10 1 tr 0.1 0.01 0.00 10 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 0 10 -1 10 0 10 1 10 2 ID [A] 3 FMI12N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)