FMI12N50ES

FMI12N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack (L) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±12 ± 48 ± 30 12 460.8 18.0 6.3 100 1.67 180 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ± 30V, VDS =0V I D =6A, VGS =10V I D =6A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =6A RG =15Ω Vcc =250V I D =12A VGS =10V L=2.44mH, Tch =25°C I F =12A, VGS =0V, Tch =25°C I F =12A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 3.2 4.5 12 typ. 3.7 10 0.427 9 1400 160 11.5 31 18 83 16 43 13 14 6 0.86 0.37 5.0 max. 4.2 25 250 100 0.50 2100 240 17.5 46.5 27 124.5 27 56 23 21 10 1.30 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.690 75.0 Unit °C/W °C/W Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS =5A, L=33.8mH, Vcc=50V, RG =50Ω. E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=6.3kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMI12N50ES Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c FUJI POWER MOSFET 200 180 160 140 120 PD [W] 10 2 t= 1µs 10µs 100µs 10 1 ID [A] 100 80 60 40 20 0 0 25 50 75 Tc [°C] 100 125 150 10 0 1ms 10 -1 P o w e r l o s s w a v e f o rm : S qu are w a v e form PD t 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 30 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 25 20 ID[A] 10 ID [A] 15 1 10 5 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.9 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 0.8 10 RDS(on) [ Ω ] 0.7 7V 8V 10V 20V gfs [S] 0.6 1 0.5 0.4 0.1 0.1 1 ID [A] 10 100 0.3 0 5 10 ID [A] 15 20 2 FMI12N50ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA FUJI POWER MOSFET 2.0 1.8 1.6 8 7 6 1.4 RDS(on) [ Ω ] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 max. typ. VGS(th) [V] 5 4 3 2 1 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 m ax. typ. m in. 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 Vcc= 100V 250V 400V 10 4 10 3 Ciss 8 VGS [V] C [pF] 6 10 2 Coss 4 10 1 2 Crss 10 0 0 0 10 20 30 40 Qg [nC] 50 60 70 80 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω td(off) 10 10 2 tf IF [A] t [ns] td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 10 ID [A] 1 10 2 3 FMI12N50ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)