FMI12N60ES

FMI12N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] T-Pack(L) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 600 600 ±12 ± 48 ± 30 12 384 18 4.4 100 1.67 180 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =6A, VGS =10V I D =6A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =6A RG =27Ω Vcc =300V I D =12A VGS =10V L=2.64mH, Tch =25°C I F =12A, VGS =0V, Tch =25°C I F =12A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 600 3.7 4 12 typ. 4.2 10 0.641 8 1300 150 8.5 40 40 74 19 37 15 12 6.5 0.86 0.52 5.5 max. 4.7 25 250 100 0.75 1950 225 13 60 60 111 29 56 23 18 10 1.30 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.690 75.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =5A, L=28.2mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.4kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMI12N60ES Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c 10 2 FUJI POWER MOSFET 200 180 160 140 120 PD [ W ] t= 1µs 10µs 100µs 10 1 I D [ A] 100 80 60 40 20 0 0 25 50 75 Tc [°C] 100 125 150 10 0 1m s 10 -1 P o w e r l o s s w a v e fo r m : S q u a r e w a v e fo r m PD t 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 25 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 20 1 0V 8. 0 V 7 . 5V 10 ID [A] 10 7 . 0V ID[A] 15 1 5 6. 5V V G S= 6 . 0 V 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 2 4 6 VGS[V] 8 10 12 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.3 1.2 1.1 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 7V 8V 10V 20V 10 RDS(on) [ Ω ] 1.0 0.9 0.8 0.7 0.6 gfs [S] 1 0.1 0.1 1 ID [A] 10 100 0.5 0 5 10 ID [A] 15 20 2 FMI12N60ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA FUJI POWER MOSFET 2.5 8 7 2.0 6 VGS(th) [V] RDS(on) [ Ω ] 1.5 5 4 3 2 max. typ. min. m ax. 1.0 typ. 0.5 1 0 0.0 - 50 -25 0 25 50 Tch [°C] 75 100 125 150 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25 °C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Vcc= 120V 300V 480V 10 10 3 Ciss VGS [V] C [pF] 8 10 2 6 Coss 4 10 1 2 Crss 10 0 0 0 10 20 30 40 50 60 70 Qg [nC] 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=27 Ω 10 10 2 td(off) td(on) tf IF [A] t [ns] tr 10 1 1 0.1 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 ID [A] 10 1 10 2 3 FMI12N60ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)