FMI13N60E

FMI13N60E Features FUJI POWER MOSFET Super FAP-E3 series Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability T-Pack(L) N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 6 00 6 00 ±13 ± 52 ± 30 13 471.5 22.5 5.2 100 1.67 225 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =6.5A, VGS =10V I D =6.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =6.5A RGS =10Ω Vcc =300V I D =13A VGS =10V L=2.36mH, Tch =25°C I F =13A, VGS =0V, Tch =25°C I F =13A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 2.5 7.5 13 typ. 3.0 10 0.50 15 2150 190 14 21 8 100 15 60 17 18 0.90 0.7 8 max. 3.5 25 250 100 0.58 3225 285 21 31.5 12 150 22.5 90 25.5 27 1.08 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.560 75.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =6A, L=24.0mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=5.2kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMI13N60E Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 300 Safe Operat ing Area ID=f(VDS):Duty=0 (Singl e pu ls e),Tc =25°C 10 2 t= 1µs 250 10 200 1 10µs 100µs PD [W] 150 ID [A] 10 0 1m s 100 10 50 -1 Po w er l o s s wa v e fo r m : Squ ar e w av e fo r m PD tt D. C. 0 0 25 50 75 T c [ °C ] 100 125 150 10 -2 10 0 10 1 V DS [V] 10 2 10 3 40 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 1 00 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 ° C 30 10 I D [ A] 20 I D [ A] 1 10 0.1 0 0 4 8 12 V DS [V] 16 20 24 2 3 4 VGS[V] 5 6 7 100 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25 ° C 1.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 ° C VGS=4.5V 5V 0.9 5.5V 6V 10V 10 RDS( on ) [ Ω ] 0.8 0.7 g fs [S] 0.6 1 0.5 0.4 0.1 0.1 1 ID [A] 10 100 0.3 0 5 10 15 ID [A] 20 25 30 2 FMI13N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID= 6.5A,VGS=10V 6 FUJI POWER MOSFET 2.0 1.8 1.6 1.4 RDS( on ) [ Ω ] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS= VGS,ID=250µA 5 4 VG S( th ) [V] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 - 25 0 25 50 Tch [°C] 75 100 125 150 max. m ax. 3 typ. m in. 2 typ. 1 0 -50 -25 0 25 50 75 T ch [ °C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=13A,Tch=25°C 14 10 Vcc= 120V 300V 480V 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Ciss 10 3 10 VGS [V] C [p F] 8 10 2 6 Coss 4 10 1 Cr ss 2 0 0 20 40 Qg [nC] 60 80 100 10 0 10 -1 10 0 10 VDS [V] 1 10 2 10 3 1 00 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td( off) 10 10 2 tf IF [A] t [n s] td( on) 1 10 1 tr 0.1 0.0 0 0.2 5 0.5 0 0.7 5 1.0 0 VSD [V] 1.2 5 1.5 0 1.7 5 2.0 0 10 0 10 -1 10 0 ID [A] 10 1 10 2 3 FMI13N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)