FMI20N50E

FMI20N50E Features FUJI POWER MOSFET Super FAP-E3 series Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability T-Pack(L) N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±20 ±80 ±30 20 582.5 27 7.4 100 2.16 270 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µA, VGS =0V I D =250 µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ±30V, VDS =0V I D =10A, VGS =10V I D =10A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =10A RGS =10Ω Vcc =250V I D =20A VGS =10V L=1.07mH, Tch=25°C I F =20A, VGS =0V, Tch =25°C I F =20A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 11 20 typ. 3.0 10 0.27 22 2650 250 19 22 11 120 21 77 17 22 0.90 0.5 7 max. 3.5 25 250 100 0.31 3980 375 28.5 33 16.5 180 31.5 115.5 25.5 33 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.460 62.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =8A, L=16.7mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc ≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=7.4kV/µs, Vcc ≤BVDSS, Tch≤150°C. 1 FMI20N50E Allowable Power Dissipation PD=f(Tc) Saf e Opera tin g Area ID =f(VDS):Duty =0(Sing le puls e),T c=25 °c 10 2 FUJI POWER MOSFET 400 t= 1µs 10µs 300 10 1 100µs PD [W] ID [A] 200 10 0 1m s 100 10 -1 P ow er l o s s w av e fo r m : S qua re wav e fo r m PD t D.C. 0 0 25 50 75 T c [°C] 100 125 150 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 T ypical Output Characteristics ID= f(VDS):80 µs pulse test,Tch= 25 °C 50 1 00 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 40 10V 6.0V 5.5V 10 ID[A] ID [A] 30 5.0V 20 1 10 VGS=4.5V 0.1 0 0 4 8 12 VDS [V] 16 20 24 2 3 4 VGS[V] 5 6 7 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.8 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.5V 5V 0.7 RDS( o n) [ Ω ] 10 0.6 5.5V 6V 0.4 10V g fs [S] 0.5 1 0.3 0 .1 0.1 1 ID [A] 10 100 0.2 0 5 10 15 20 ID [A] 25 30 35 40 2 FMI20N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V FUJI POWER MOSFET 1 .0 6 Gate Threshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250µA 0 .8 5 RDS( o n) [ Ω ] 0 .6 V GS( th ) [V] 4 m a x. 3 typ. m in. 2 0 .4 m a x. typ. 0 .2 1 0 .0 - 50 -2 5 0 25 50 T ch [°C] 75 10 0 12 5 15 0 0 -50 - 25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25 °C 14 Vcc= 1 00 V 2 50 V 4 00 V Typical Capacitance C=f(VDS):VGS=0V,f= 1MHz 10 4 12 Ciss 10 3 10 VG S [ V] C [p F] 8 10 2 6 Co s s 4 10 1 Cr s s 2 0 0 20 40 60 Qg [n C] 80 10 0 12 0 10 0 10 -1 10 0 10 VDS [V] 1 10 2 10 3 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch= 25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td( off) 10 IF [A] 10 2 tf t [n s] td(on) 1 10 1 tr 0.1 0.00 10 0.25 0.50 0.75 1 .0 0 VSD [V] 1.25 1.50 1.75 2 .0 0 0 10 -1 10 0 10 ID [A] 1 10 2 3 FMI20N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)