FML12N60ES

http://www.fujisemi.com FML12N60ES Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TFP 4 0.6±0.2 Equivalent circuit schematic 9.0± 0.2 0.1 7.0± 0.2 0.4± 0.1 0.5 4D 10.1±0.3 9.0±0.2 0.5±0.2 2.0 1.5 2.0 2.5 G1 (10.1) (5.8) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 1 1.0±0.2 1.0±0.2 S1 2 3 S2 0.4±0.1 3.6±0.2 2.8±0.2 Solder Plating (2.2) (4.0) (3.2) (0.8) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±12 ±48 ±30 12 384 18 4.4 100 1.44 180 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V (2.1) 2 3 Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V I D =6A, VGS=10V I D =6A, VDS=25V VDS=25V VGS=0V f=1MHz Vcc =300V VGS=10V I D =6A RG=27Ω Vcc =300V I D =12A VGS=10V L=2.64mH, Tch=25°C I F=12A, VGS=0V, Tch=25°C I F=12A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 600 3.7 4 12 typ. 4.2 10 0.641 8 1300 150 8.5 40 40 74 19 37 15 6.5 12 0.86 0.52 5.5 max. 4.7 25 250 100 0.75 1950 225 13 60 60 111 29 56 23 10 18 1.30 Unit V V µA nA Ω S pF Tch=25°C Tch=125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Rth (ch-a) Test Conditions Channel to case Channel to Ambient Channel to Ambient Note*6 min. typ. max. 0.69 87 52 Unit °C/W °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C. Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 1 FML12N60ES Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET http://www.fujisemi.com 200 180 160 10 2 Safe Operating Area ID=f(VDS):Duty=0(Singlepulse), Tc=25°c t= 1µs 10µs 10 140 120 PD [W] 1 100µs 100 80 60 ID [A] 10 0 1ms 10 40 -1 Power loss waveform : Square waveform PD 20 0 t 0 25 50 75 Tc [˚C] 100 125 150 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25˚C 25 Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C 100 20 10V 8.0V 7.5V 10 ID [A] 15 ID [A] 7.0V 10 1 6.5V 5 VGS=6.0V 0 0.1 24 0 4 8 12 VDS [V] 16 20 0 2 4 6 VGS [V] 8 10 12 Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25˚C 100 1.3 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25˚C VGS=6.0V 1.2 1.1 6.5V 7V 8V 10V 20V 10 1.0 RDS(on) [Ω] gfs [S] 0.9 0.8 0.7 0.6 1 0.1 0.1 1 ID [A] 10 100 0.5 0 5 10 ID [A] 15 20 2 FML12N60ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 2.5 8 7 2.0 6 5 max. 4 3 2 0.5 1 0.0 -50 -25 0 25 50 Tch [˚ C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [˚ C] typ. min. FUJI POWER MOSFET http://www.fujisemi.com Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA RDS(on) [ Ω ] 1.5 max. 1.0 typ. VGS(th) [V] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25˚C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V, f=1MHz 12 Vcc= 120V 300V 480V 10 10 3 Ciss 8 VGS [V] C [pF] 10 2 6 Coss 4 10 1 2 Crss 10 0 0 0 10 20 30 40 Qg [nC] 50 60 70 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25˚C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=27Ω 10 10 2 td(off) tf IF [A] td(on) t [ns] tr 10 1 1 0.1 0.00 10 0 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 -1 10 0 10 1 10 2 3 ID [A] FML12N60ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V, I(AV)