http://www.fujisemi.com
FML16N50ES
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TFP
4
0.6±0.2
Equivalent circuit schematic
9.0± 0.2
0.1
7.0± 0.2
0.4± 0.1
0.5
4D
10.1±0.3 9.0±0.2 0.5±0.2
2.0 1.5
2.0 2.5
G1
(10.1) (5.8)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
1 1.0±0.2 1.0±0.2
S1 2 3 S2
0.4±0.1
3.6±0.2
2.8±0.2
Solder Plating
(2.2)
(4.0)
(3.2) (0.8)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±16 ±64 ±30 16 485 22.5 4.8 100 1.44 225 150 -55 to +150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V
(2.1)
2
3
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=500V, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V I D =8A, VGS=10V I D =8A, VDS=25V VDS=25V VGS=0V f=1MHz Vcc =300V VGS=10V I D =8A RG=18Ω Vcc =250V I D =16A VGS=10V L=1.52mH, Tch=25°C I F=16A, VGS=0V, Tch=25°C I F=16A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 500 3.7 5.5 16 typ. 4.2 10 0.33 11 1700 210 13 37 30 87 17 48 17 7 18 0.90 0.46 6.0 max. 4.7 25 250 100 0.38 2550 315 19.5 55.5 45 130.5 25.5 72 25.5 10.5 27 1.35 Unit V V µA nA Ω S pF
Tch=25°C Tch=125°C
ns
nC A V µS µC
Thermal Characteristics
Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Rth (ch-a) Test Conditions Channel to case Channel to Ambient Channel to Ambient Note*6 min. typ. max. 0.56 87 52 Unit °C/W °C/W °C/W
Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C. Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2)
1
FML16N50ES
Allowable Power Dissipation PD=f(Tc)
Safe Operating Area ID=f(VDS):Duty=0(Singlepulse), Tc=25˚c
FUJI POWER MOSFET http://www.fujisemi.com
300
10
2
t= 1µs 10µs
250
10
200
1
100µs
PD [W]
150
100
ID [A]
10
0
1ms
10
50
-1
Power loss waveform : Square waveform PD
t
0 0 25 50 75 Tc [˚ C] 100 125 150
10
-2
10
0
10
1
VDS [V]
10
2
10
3
Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25˚C
40
100
Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
10V
30
8.0V
ID[A]
10
ID [A]
20
7.5V
1
7.0V
10
6.5V VGS=6.0V
0 0 4 8 12 VDS [V] 16 20 24
0 2 4 6 VGS[V] 8 10 12 0.1
Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25˚C
100
0.8
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25˚C
VGS=6.5V 0.7 7V
10
RDS(on)[Ω]
0.6
8V 10V 20V
gfs [S]
0.5
1
0.4
0.3
0.1 0.1 1 ID [A] 10 100
0.2 0 10 20 ID [A] 30 40
2
FML16N50ES
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A, VGS=10V
1.2 1.1 1.0 0.9 0.8 0.7
RDS(on)[Ω]
VGS(th)[V]
FUJI POWER MOSFET http://www.fujisemi.com
8 7 6 5
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA
max. 4 3 2 1 0 typ. min.
0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 Tch [˚ C] 75 100 125 150 max. typ.
-50
-25
0
25
50 75 Tch [˚ C]
100
125
150
Typical Gate Charge Characteristics VGS=f(Qg):ID=16A, Tch=25˚C
14
Typical Capacitance C=f(VDS):VGS=0V, f=1MHz
10
4
12 Vcc= 100V 250V 400V
10
10
3
Ciss
VGS[V]
C[pF]
8
10
2
6
Coss
4
10
2
1
Crss
0 0 20 40 Qg [nC] 60 80
10
0
10
-2
10
-1
10
0
10
1
10
2
VDS [V]
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25˚C
100
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=18Ω
10
3
td(off)
10
10
2
tf
IF[A]
td(on)
t[ns]
tr
1
10
1
0.1 0.00
0.25
0.50
0.75 VSD [V]
1.00
1.25
1.50
10
0
10
-1
10
0
10
1
10
2
3
ID [A]
FML16N50ES
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V, I(AV)
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