FMP06N60ES

FMP06N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 6 00 6 00 ±6 ± 24 ± 30 6 313.7 10.5 3.8 100 2.02 105 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =3A, VGS =10V I D =3.0A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =3.0A RG =27Ω Vcc =300V I D =6A VGS =10V L=6.39mH, Tch =25°C I F =6A, VGS =0V, Tch =25°C I F =6A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 3.2 2.5 6 typ. 3.7 10 1.03 5 950 100 7.5 29 15 75 16 31 10.5 8 4.5 0.90 0.4 3.3 max. 4.2 25 250 100 1.20 1425 150 11 43.5 22.5 113 24 46.5 15.8 12 6.75 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 1.19 62.0 Unit °C/W °C/W Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS =2.4A, L=99.8mH, Vcc=60V, RG =50Ω. E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=3.8kV/μs, Vcc≤BVDSS, Tch≤150°C. 1 FMP06N60ES Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c FUJI POWER MOSFET 150 t= 1µs 125 10 1 10µs 100µs 100 10 0 P D [W ] I D [ A] 75 1ms 10 -1 50 10 -2 P o w e r l o s s w a v e fo r m : Squ a r e w a v e fo r m PD t 25 0 0 25 50 75 Tc [°C] 100 125 150 10 -3 10 0 10 1 VDS [V] 10 2 10 3 15 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 10 V 8.0V 7 .0 V 10 I D [ A] ID[A] 10 6 .5 V 1 5 VGS=6.0V 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 2.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 1.8 7V 8V 10V 20V 10 RDS(on) [ Ω ] 1.6 gf s [ S] 1.4 1 1.2 1.0 0.1 0.1 1 ID [A] 10 100 0.8 0 2 4 6 ID [A] 8 10 12 14 2 FMP06N60ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V FUJI POWER MOSFET 3.5 8 7 6 VGS(th) [V] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 3.0 2.5 5 4 3 m ax. typ. m in. RDS(on) [ Ω? ] 2.0 1.5 m ax. typ. 1.0 2 1 0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0.5 0.0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=6A,Tch=25 °C 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 Vcc= 120V 300V 480V 10 3 Ciss VG S [ V] C [pF] 8 10 2 6 Coss 4 10 1 2 Crss 10 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Qg [nC] 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=27 Ω 10 10 2 td(off) tf I F [ A] t [ns] td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 10 1 ID [A] 3 FMP06N60ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)