FMR19N60ES

FMR19N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 6 00 6 00 ±19 ±76 ± 30 19 799 15 4.8 100 3.13 150 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS = VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =9.5A, VGS =10V I D =9.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =9.5A RG =15Ω Vcc =300V I D =19A VGS =10V L=1.71mH, Tch =25°C I F =19A, VGS =0V, Tch =25°C I F =19A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 3.7 8 19 typ. 4.2 10 0.31 16 2700 300 17 45 35 122 20 74 23 25 9 0.90 0.6 10 max. 4.7 25 250 100 0.365 4050 450 26 68 53 183 30 111 34.5 38 14 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to c ase Channel to ambient min. typ. max. 0.830 40.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =8A, L=22.9mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt ≤ 4.8kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMR19N60ES Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c FUJI POWER MOSFET 160 140 120 100 PD [W] 10 2 t= 1µs 10µs 1 10 100µs 10 0 1m s 80 I D [ A] 60 40 10 -1 P o we r lo ss w a v e f o rm : S q u a r e w a v e fo r m 10 20 0 0 25 50 75 Tc [°C] 100 125 150 -2 PD t 10 -3 10 0 10 1 VDS [V] 10 2 10 3 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 50 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 40 1 0V 8 . 0V 7. 5 V 10 ID [A] 20 ID[A] 30 7. 0V 6. 5 V 1 10 VGS=6.0V 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 2 4 6 VGS[V] 8 10 12 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.50 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 0.45 7V 8V 10V 20V 10 RDS(on) [ Ω ] 0.40 gfs [S] 0.35 1 0.30 0.1 0.1 1 ID [A] 10 100 0.25 0 5 10 15 20 ID [A] 25 30 35 40 2 FMR19N60ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=9.5A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA FUJI POWER MOSFET 1.0 8 7 0.8 6 VGS(th) [V] RDS(on) [ Ω ] 0.6 5 4 3 2 max. typ. min. 0.4 max. typ. 0.2 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=19A,Tch=25 °C 14 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 Vcc= 120V 300V 480V 10 4 Ciss 10 3 VGS [V] 6 C [pF] 8 10 2 Coss 4 10 2 1 Crss 0 0 20 40 60 Qg [nC] 80 100 120 10 0 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω td(off) 10 10 2 tf IF [A] td(on) t [ns] tr 1 10 1 0.1 0.00 10 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 ID [A] 3 FMR19N60ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)