FMR23N50E

FMR23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ± 23 ± 92 ± 30 23 767.3 15 9.3 100 3.13 150 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf Q th QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ± 30V, VDS =0V I D =11.5A, VGS =10V I D =11.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =11.5A RGS = 5.6Ω Vcc =250V I D =23A VGS =10V L=1.16mH, Tch =25°C I F =23A, VGS =0V, Tch =25°C I F =23A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 14 23 typ. 3.0 10 0.21 28 3500 330 24 24 13 150 20 11 93 24 30 0.90 0.5 8 max. 3.5 25 250 100 0.245 5250 495 36 36 19.5 225 30 16.5 139.5 36 45 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.83 40.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=5.0kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMR23N50E Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25°C 10 2 160 140 120 100 PD [W] t= 1µs 10µs 10 1 100µs 10 0 1ms ID [A] 80 60 40 10 -1 P o we r l o s s w a v e fo r m : S qua r e w a v e fo rm D.C. 10 20 0 0 25 50 75 Tc [°C] 100 125 150 -2 PD tt 10 -3 10 0 10 1 VDS [V] 10 2 10 3 70 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 60 1 0V 50 6 . 0V 5. 5V ID[A] 10 ID [A] 40 30 5. 0V 1 20 V G S= 4 . 5 V 10 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.9 0.8 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.5V 5.0V 10 RDS(on) [ Ω ] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5.5V 6.0V 10V gfs [S] 1 0.1 0.1 1 ID [A] 10 100 0 10 20 30 ID [A] 40 50 60 2 FMR23N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 6.0 5.5 0.8 FUJI POWER MOSFET 1.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 5.0 4.5 4.0 VGS(th) [V] RDS(on) [ Ω ] 0.6 3.5 3.0 2.5 max. typ. 0.4 max. typ. 2.0 1.5 1.0 0.5 min. 0.2 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Vcc= 100V 250V 400V Ciss 10 3 10 VGS [V] C [pF] 8 10 2 Coss 6 4 10 1 Crss 2 0 0 20 40 60 80 Qg [nC] 100 120 140 10 0 10 -1 10 0 10 1 10 2 10 3 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=5.6 Ω td(off) tf 10 10 2 IF [A] t [ns] td(on) 1 10 1 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 ID [A] 3 FMR23N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)