FMR23N50ES

FMR23N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ± 23 ± 92 ± 30 23 767.3 15 5.4 100 3.13 130 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ± 30V, VDS =0V I D =11.5A, VGS =10V I D =11.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =11.5A RGS =10Ω Vcc =250V I D =23A VGS =10V L=1.16mH, Tch =25°C I F =23A, VGS =0V, Tch =25°C I F =23A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 3.7 8.5 23 typ. 4.2 10 0.209 17 2700 330 20 42 36 94 17 73 24 27 10 0.90 0.5 8.0 max. 4.7 25 250 100 0.245 4050 495 30 63 54 141 25.5 109.5 36 40.5 15 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.830 40.0 Unit °C/W °C/W Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω. E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=5.4kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMR23N50ES Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c FUJI POWER MOSFET 160 140 120 100 PD [W] 10 2 t= 1µs 10µs 10 1 100µs 10 0 1m s ID [A] 80 60 40 10 -1 P o w e r l o s s w a v e fo r m : S q u a r e w a v e fo r m 10 20 0 0 25 50 75 Tc [°C] 100 125 150 -2 PD t 10 -3 10 0 10 1 VDS [V] 10 2 10 3 70 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 60 10V 50 8.0V ID[A] 10 ID [A] 40 7 .5 V 30 1 20 7 .0 V 6 .5 V VGS=6.0V 0 4 8 12 VDS [V] 16 20 24 0.1 10 0 0 2 4 6 VGS[V] 8 10 12 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 0.6 7V 10 RDS(on) [ Ω ] 0.5 gfs [S] 0.4 8V 0.3 10V 20V 1 0.2 0.1 0.1 1 ID [A] 10 100 0.1 0 10 20 30 ID [A] 40 50 60 2 FMR23N50ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V FUJI POWER MOSFET 1.0 8 7 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 0.8 6 5 4 3 typ. RDS(on) [ Ω ] 0.6 VGS(th) [V] max. typ. min. 0.4 ma x . 0.2 2 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 Vcc= 100V 250V 400V 10 4 Ciss 10 3 VGS [V] 6 C [pF] 8 10 2 Coss 4 10 1 2 Crss 0 0 20 40 60 Qg [nC] 80 100 120 10 0 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω td(off) 10 10 2 td(on) IF [A] t [ns] tf tr 1 10 1 0.1 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 1.75 10 0 10 -1 10 0 10 1 10 2 ID [A] 3 FMR23N50ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)