FMR28N50ES

FMR28N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ± 28 ±112 ± 30 28 1033.1 20 6.9 100 3.13 20 0 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ± 30V, VDS =0V I D =14A, VGS =10V I D =14A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =14A RGS = 8.2Ω Vcc =250V I D =28A VGS =10V L=1.04mH, Tch =25°C I F =28A, VGS =0V, Tch =25°C I F =28A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 3.7 10.5 28 typ. 4.2 10 0.16 21 3500 420 24 45 40 107 17 92 30 34 13 0.90 0.72 11.2 max. 4.7 25 250 100 0.19 5250 630 36 67.5 60 160.5 25.5 138 45 51 19.5 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.630 40.0 Unit °C/W °C/W Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS =12A, L=13.2mH, Vcc=50V, RG =50Ω. E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=6.9kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMR28N50ES Allowable Power Dissipation PD=f(Tc) 10 250 1 2 FUJI POWER MOSFET 300 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 100µs 200 10 PD [ W ] 100 10 50 -1 ID [A] 150 10 0 1ms P o w e r lo s s wa v e f o rm : S q u a r e w a v e fo r m PD t 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 0 10 1 VDS [V] 10 2 10 3 80 70 60 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10V 8. 0 V 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 10 50 ID [A] 7. 5 V ID[A] 40 7 .0 V 30 20 10 0 0 4 8 12 VDS [V] 16 20 24 1 6 .5 V VGS=6.0V 0.1 0 2 4 6 VGS[V] 8 10 12 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=6.0V 6.5V 0.6 7V 10 RDS(on) [ Ω ] 0.5 gfs [S] 0.4 1 0.3 8V 10V 20V 0.2 0.1 0.1 1 ID [A] 10 100 0.1 0 10 20 30 40 ID [A] 50 60 70 80 2 FMR28N50ES Drain-Source On-state Resistance RDS(on)=f(Tch):ID=14A,VGS=10V FUJI POWER MOSFET 0.6 8 7 6 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 0.5 0.4 VGS(th) [V] RDS(on) [ Ω ] 5 4 3 2 1 0 max. typ. min. 0.3 m ax. 0.2 typ. 0.1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 -50 -25 0 25 50 75 Tch [°C] 100 125 150 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=28A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 Vcc= 100V 250V 400V 10 4 Ciss 10 3 VGS [ V] C [pF] 8 6 10 2 Coss 4 10 2 1 Crss 0 0 20 40 60 80 100 120 140 Qg [nC] 10 0 10 -2 10 -1 10 0 10 1 10 2 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω td(off) 10 10 2 td(on) IF [A] t [ns] tf tr 1 10 1 0.1 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 1.75 10 0 10 -1 10 0 10 1 10 2 ID [A] 3 FMR28N50ES Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)