FMV05N60E

FMV05N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 600 600 ± 5.5 ± 22 ± 30 5.5 262 3.2 4.2 100 2.16 32 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =2.8A, VGS =10V I D =2.8A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =2.8A RG =24Ω Vcc =300V I D =5.5A VGS =10V L=6.35mH, Tch =25°C I F =5.5A, VGS =0V, Tch =25°C I F =5.5A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 600 2.5 3 5.5 typ. 3.0 10 1.11 6 1020 95 7 11 8.5 80 17 33 8.5 9.5 0.86 0.4 3.0 max. 3.5 25 250 100 1.30 1530 143 10.5 16.5 13 120 25.5 50 13 14.5 1.30 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 3.910 58.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =2.2A, L=99.2mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.2kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMV05N60E Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 40 35 30 25 P D [W ] 10 2 Safe Operat ing Area ID=f(VDS):Duty=0(Sin gle pul se), Tc =25 ° c 10 1 t= 1µs 10µs 100µs 15 10 5 0 0 25 50 75 Tc [°C] 100 125 150 ID [A] 20 10 0 1m s 10 -1 P o we r l o s s wa v ef o r m : Squ ar e w a v e fo rm PD t 10 -2 DC 10 -1 10 0 10 VDS [V] 1 10 2 10 3 15 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10 1 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 12 10 0 ID [A ] 6 ID[A ] 9 10 -1 10 -2 3 10 -3 0 0 4 8 12 VDS [V] 16 20 24 10 -4 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 2.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.0V 4.5V 5V 6V 10V 1.8 10 1 RDS(on) [ Ω ] 1.6 gfs [S] 1.4 0.1 1.2 0.01 0.01 1.0 0.1 1 ID [A] 10 100 0 2 4 6 ID [A] 8 10 12 14 2 FMV05N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=2.8A,VGS=10V FUJI POWER MOSFET 4.0 3.5 3.0 2.5 RDS (on) [ Ω ] 6 Gate Threshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250µA 5 VG S(th ) [V] 4 m a x. 3 typ. 2.0 1.5 1.0 m ax. typ. 2 m in. 1 0.5 0.0 - 50 -25 0 25 50 T ch [°C] 75 100 125 150 0 -50 - 25 0 25 50 75 Tch [°C] 100 125 150 20 18 16 14 12 VGS [V ] Typical Gate Charge Characteristics VGS=f(Qg):ID=5.5A,Tch=25 °C 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Vcc= 120V 300V C [pF] 3 Ciss 480V 10 8 6 10 2 Coss 10 4 2 0 0 10 20 30 40 Qg [nC] 50 60 70 10 1 Crss 0 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=24 Ω 10 10 2 td(off) IF [A] t [ns] 1 tf td(on) 10 1 0.1 tr 0.01 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 10 1 3 FMV05N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)