FMV10N80E

http://www.fujisemi.com FMV10N80E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 800 800 ±10 ±40 ±30 10 572.4 8.5 2.1 100 2.16 85 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=800V, VGS=0V VDS=640V, VGS=0V VGS=±30V, VDS=0V I D =5.0A, VGS=10V I D =5.0A, VDS=25V VDS=25V VGS=0V f=1MHz Vcc =600V VGS=10V I D =5.0A RG=24Ω Vcc =450V I D =10A VGS=10V See Fig.5 L=4.20mH, Tch=25°C I F=10A, VGS=0V, Tch=25°C I F=10A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 800 3.5 5.0 10 typ. 4.0 10 0.9 10 1650 165 11 34 32 105 30 50 14 6 17 0.90 1.8 15 max. 4.5 25 250 100 1.1 2500 250 17 51 48 160 45 75 21 9 26 1.35 Unit V V µA nA Ω S pF Tch=25°C Tch=125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.862 50.0 Unit °C/W °C/W Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS=4.0A, L=65.6mH, Vcc=80V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMV10N80E Allowable Power Dissipation PD=f(Tc) 10 FUJI POWER MOSFET http://www.fujisemi.com Safe Operating Area ID=f(VDS):Duty=0(Singlepulse), Tc=25°c 2 120 100 t= 1µs 10 1 10µs 100µs 80 PD [W] ID [A] 60 10 0 1ms 40 10 20 -1 Po we r loss wavefo rm : Sq uare wa veform PD t 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C 20 100 Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C 15 20V 10V 7.0V 10 ID [A] 10 6.0V ID[A] 1 5 VGS=5.5V 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS [V] 6 7 8 9 10 Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C 100 2.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25°C VGS=5.5V 6V 2.0 10 gfs [S] RDS(on) [Ω] 1.6 7V 1.2 10V 20V 1 0.8 0.1 0.1 1 ID [A] 10 100 0 2 4 6 8 10 ID [A] 12 14 16 18 2 FMV10N80E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.0A, VGS=10V FUJI POWER MOSFET http://www.fujisemi.com Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 8 3.5 3.0 7 2.5 6 VGS(th) [V] 5 RDS(on) [Ω] 2.0 max. typ. 4 1.5 max. 1.0 typ. 0.5 3 min. 2 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25°C 14 Vcc= 160V 400V 640V 10 3 Typical Capacitance C=f(VDS):VGS=0V, f=1MHz 10 4 12 Ciss 10 VGS [V] 8 C [pF] 10 2 6 Coss 4 10 1 2 Crss 0 10 0 0 10 20 30 40 Qg [nC] 50 60 70 80 10 -2 10 -1 10 0 10 1 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25°C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V, VGS=10V, RG=24Ω 10 10 2 tf td(off) IF [A] 1 t [ns] td(on) tr 10 1 0.1 0.01 0.00 10 0 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 -1 10 0 10 ID [A] 1 10 2 3 FMV10N80E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=80V, I(AV)