FMV11N60E

FMV11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0± 0.5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =5.5A RG =15Ω Vcc =300V I D =11A VGS =10V L=2.64mH, Tch =25°C I F =11A, VGS =0V, Tch =25°C I F =11A, VGS =0V -di/dt=100A/µs, Tch=25°C Characteristics 600 600 ±11 ± 44 ± 30 11 384 6.5 4.9 100 2.16 65 150 -55 to + 150 min. 600 2.5 6 11 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C typ. 3.0 10 0.641 12 1700 150 11 21 9.5 100 19 48.5 12.5 14 0.86 0.52 5.5 max. 3.5 25 250 100 0.75 2550 225 16.5 31.5 14.5 150 28.5 73 19 21 1.30 Unit V V µA nA Ω S pF Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 1.920 58.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =5A, L=28.2mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.4kV/μs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMV11N60E Allowable Power Dissipation PD=f(Tc) Safe Ope ratin g Area ID=f(VDS): Du ty=0 (Singl e pu ls e),Tc =25 °c FUJI POWER MOSFET 80 70 60 50 PD [W] 10 2 t= 1µs 10µs 100µs 10 1 ID [A] 40 30 20 10 0 0 25 50 75 Tc [°C] 100 125 150 10 0 1m s 10 -1 P ow e r l o s s w a ve fo r m : S qua r e w av e f or m PD t 10 -2 DC 0 10 -1 10 10 VDS [V] 1 10 2 10 3 20 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 ° C 1 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 10 15 10 0 ID [A ] ID[A ] 10 10 -1 10 -2 5 10 -3 0 0 5 10 VDS [V] 15 20 10 -4 2 3 4 VGS[V] 5 6 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 1.3 1.2 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.0V 4.5V 5V 6V 10 1.1 1.0 0.9 0.8 0.7 0.6 10V 20V 1 0.1 RDS(on) [ Ω ] gfs [S] 0.01 0.01 0.5 0.1 1 ID [A] 10 100 0 5 10 ID [A] 15 20 2 FMV11N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V FUJI POWER MOSFET 2.5 6 Gate Threshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250µA 2.0 5 RDS(on) [ Ω ] 1.5 VG S(th ) [V] 4 m a x. 3 typ. max. 1.0 typ. 2 m in. 0.5 1 0.0 - 50 -25 0 25 50 T ch [°C] 75 100 125 150 0 -50 - 25 0 25 50 75 Tch [°C] 100 125 150 20 18 Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25 ° C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 16 14 12 VGS [V ] 4 Vcc= 120V 300V C [pF ] Ciss 10 3 480V 10 8 6 4 2 0 0 10 20 30 40 Qg [nC] 50 60 70 80 10 2 Coss 10 1 Crss 10 0 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω 10 10 2 td(off) tf IF [A] t [ns] 1 td(on) 10 1 0.1 tr 0.01 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 0 10 -1 10 0 10 1 10 2 3 FMV11N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)