FMV11N90E

FMV11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0± 0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 9 00 9 00 ±11 ±44 ± 30 11 811.9 12 2.2 100 2.16 120 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =900V, VGS =0V VDS =720V, VGS =0V VGS = ± 30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =600V VGS =10V I D =5.5A RG =20Ω Vcc =450V I D =11A VGS =10V L=4.92mH, Tch =25°C I F =11A, VGS =0V, Tch =25°C I F =11A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 9 00 3.5 6.5 11 typ. 4.0 10 0.83 13 2300 200 15 37 32 124 34 60 17 23 7 0.90 2.0 20 max. 4.5 25 250 100 1.0 3450 300 22.5 56 48 186 51 90 26 35 11 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 1.0417 58.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =4.4A, L=76.9mH, Vcc=90V, RG =10Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche current ' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=2.2kV/µs, Vcc ≤ BVDSS, Tch≤150°C. 1 FMV11N90E Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25°c FUJI POWER MOSFET 200 10 2 t= 1μs 150 10 1 10μs 100μs PD [W] ID [A] 100 10 0 1ms 50 10 -1 P o w e r l os s w a v e fo rm : S q u a r e w a v e fo rm PD t 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 -1 10 0 20 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25 °C 10V 7.0V 6.5V 10 VDS [V] 1 10 2 10 3 100 Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 15 10 ID [A] 10 6.0V ID[A] 1 0.1 5 VGS=5.5V 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C 1.8 VGS=5.5V 1.6 6V 10 RDS(on) [ Ω ] 1.4 gfs [S] 1.2 6.5V 7V 10V 20V 1 1.0 0.8 0.1 0.1 1 ID [A] 10 100 0.6 0 5 10 ID [A] 15 20 2 FMV11N90E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V FUJI POWER MOSFET 4.0 3.5 3.0 2.5 RDS(on) [ Ω ] 2.0 1.5 8 7 6 VGS(th) [V] 5 4 3 2 1 0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA max. typ. min. max. 1.0 0.5 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 typ. -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25°C 14 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 4 12 Vcc= 120V 450V 720V Ciss 10 3 10 VGS [V] C [pF] 8 10 2 6 Coss 4 10 1 2 Crss 0 0 20 40 Qg [nC] 60 80 100 10 0 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=20Ω tf 10 td(off) 10 2 IF [A] t [ns] 1 td(on) 10 1 tr 0.1 0.01 0.00 10 0 0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50 10 -1 10 0 ID [A] 10 1 10 2 3 FMV11N90E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=90V,I(AV)