FMV12N50ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7± 0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F (SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ±12 ± 48 ± 30 12 460.8 6.5 6.3 100 2.16 65 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ± 30V, VDS =0V I D =6A, VGS =10V I D =6A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =6A RG =15Ω Vcc =250V I D =12A VGS =10V L=2.44mH, Tch =25°C I F =12A, VGS =0V, Tch =25°C I F =12A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 3.2 4.5 12 typ. 3.7 10 0.427 9 1400 160 11.5 31 18 83 16 43 13 14 6 0.86 0.37 5.0 max. 4.2 25 250 100 0.50 2100 240 17.5 46.5 27 124.5 27 56 23 21 10 1.30 Unit V V µA nA Ω S pF
Tch =25°C Tch =125°C
ns
nC A V µs µC
Thermal Characteristics
Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 1.920 58.0 Unit °C/W °C/W
Note *1 : Tch≤150°C. Note *2 : Stating Tch=25°C, IAS =5A, L=33.8mH, Vcc=60V, RG =50Ω. E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/μs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=6.3kV/μs, Vcc ≤ BVDSS, Tch≤150°C.
1
FMV12N50ES
Allowable Power Dissipation PD=f(Tc)
Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
FUJI POWER MOSFET
80 70 60 50
PD [ W ]
10
2
t= 1µs 10µs 100µs
10
1
ID [A]
40 30 20 10 0 0 25 50 75 Tc [°C] 100 125 150
10
0
1m s
10
-1
P o w e r l o s s w a v e f o rm : S qu are w a v e form PD
t
10
-2
10
-1
10
0
10 VDS [V]
1
10
2
10
3
30
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C
100
Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
25
10 V 8. 0 V 7 .0 V
ID[A]
20
10
ID [A]
15
6 .5 V
1
10
VGS=6.0V
5
0.1
0 0 4 8 12 VDS [V] 16 20 24
0
1
2
3
4
5 VGS[V]
6
7
8
9
10
100
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0.9
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
VGS=6.0V 6.5V
0.8
10
RDS(on) [ Ω ]
0.7
7V 8V 10V 20V
gfs [S]
0.6
1
0.5
0.4
0.1 0.1 1 ID [A] 10 100
0.3 0 5 10 ID [A] 15 20
2
FMV12N50ES
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA
FUJI POWER MOSFET
2.0 1.8 1.6
8 7 6
1.4
RDS(on) [ Ω ]
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 m ax. typ.
VGS(th) [V]
5 4 3 2 1 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 m ax. typ. m in.
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25 °C
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
12
10
Vcc= 100V 250V 400V
10
4
10
VGS [V]
C [pF]
3
Ciss
8
6
10
2
Coss
4
10
1
2
Crss 10
0
0 0 10 20 30 40 Qg [nC] 50 60 70 80
10
-2
10
-1
10
0
10
1
10
2
VDS [V]
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
td(off) 10 10
2
tf
IF [A] t [ns]
td(on)
1
10
1
tr
0.1 0.00
0.25
0.50
0.75 VSD [V]
1.00
1.25
1.50
10
0
10
-1
10
0
10
1
10
2
ID [A]
3
FMV12N50ES
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)
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