FMV16N50E

FMV16N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ±16 ±64 ±30 16 485 8 7.8 100 2.16 80 150 -55 to +150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µA, VGS =0V I D =250 µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ±30V, VDS =0V I D =8A, VGS =10V I D =8A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =8A RGS =10Ω Vcc =250V I D =16A VGS =10V L=1.52mH, Tch=25°C I F =16A, VGS =0V, Tch =25°C I F =16A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 8.5 16 typ. 3.0 10 0.33 17 2150 210 16 21 9 100 16 60 17 18 0.90 0.46 6.0 max. 3.5 25 250 100 0.38 3225 315 24 31.5 13.5 150 24 90 25.5 27 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 1.560 58.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =7A, L=18.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc ≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=7.8kV/µs, Vcc ≤BVDSS, Tch≤150°C. 1 FMV16N50E Allowable Power Dissipation PD=f(Tc) Safe Op erat ing Area ID=f(VD S):Duty=0(Singl e pu lse ),Tc =25 °c 10 2 FUJI POWER MOSFET 120 t= 1µs 10µs 100 10 80 1 100µs PD [W] 40 10 20 -1 ID [A] 60 10 0 1ms Po we r l o s s wa v e for m : Squ ar e w av e fo r m PD t D. C. 0 0 25 50 75 T c [°C] 100 125 150 10 -2 10 0 10 1 VDS [V] 10 2 10 3 Typical Output Characteristics ID= f(VDS):80 µs pulse test,Tch=25 °C 50 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 40 10V 6.0V 10 30 ID [A] 5.5V ID[A] 20 5.0V 10 VGS=4.5V 0 0 4 8 12 VDS [V] 16 20 24 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25 °C 1.0 0.9 0.8 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS=4.5V 5V 5.5V 10 RDS( on ) [ Ω ] 0.7 0.6 0.5 0.4 0.3 0.2 0.1 6V 10V g fs [S] 1 0.1 0.1 1 ID [A] 10 100 0.0 0 5 10 15 20 ID [A] 25 30 35 40 2 FMV16N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID= 8A,VGS=10V FUJI POWER MOSFET 1.2 1.1 1.0 0.9 6 Gate Threshold Voltage vs. T ch VGS(th)=f(Tch):VDS=VGS,ID=250µA 5 RDS( on ) [ Ω ] 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 - 25 0 25 50 Tch [°C] 75 100 125 150 m ax. typ . VGS(th) [V] 0.8 4 m a x. 3 typ. m in. 2 1 0 -50 - 25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C 14 10 Vcc= 100V 250V 400V 4 Typical Capacitance C=f(VDS):VGS= 0V,f=1MHz 12 Ci ss 10 3 10 VGS [V] C [p F] 8 10 2 6 Coss 4 10 1 Crss 2 0 0 20 40 Qg [nC] 60 80 100 10 0 10 0 10 VDS [V] 1 10 2 10 3 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td( off) 10 10 2 tf IF [A] t [n s] td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 ID [A] 1 10 2 3 FMV16N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)