FMV17N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2± 0.5V) High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F(SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 6 00 6 00 ±17 ± 68 ± 30 17 765.5 12 4.2 100 2.16 120 150 -55 to + 150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Conditions I D =250 µ A, VGS =0V I D =250 µ A, VDS = VGS VDS =600V, VGS =0V VDS =480V, VGS =0V VGS = ± 30V, VDS =0V I D =8.5A, VGS =10V I D =8.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =8.5A RG =15Ω Vcc =300V I D =17A VGS =10V L=2.00mH, Tch =25°C I F =17A, VGS =0V, Tch =25°C I F =17A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 6 00 3.7 5.5 17 typ. 4.2 10 0.34 11 2500 280 16 46 41 110 20 68 23 24 10 0.90 0.75 10 max. 4.7 25 250 100 0.40 3750 420 24 69 61.5 165 30 114 34.5 36 15 1.35 Unit V V µA nA Ω S pF
Tch =25°C Tch =125°C
ns
nC A V µS µC
Thermal Characteristics
Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to c ase Channel to ambient min. typ. max. 1.040 58.0 Unit °C/W °C/W
Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =7A, L=28.6mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤ -I D, -di/dt=100A/µs, Vcc ≤ BVDSS, Tch≤150°C. Note *5 : I F ≤ -I D, dv/dt=4.2kV/µs, Vcc ≤ BVDSS, Tch≤150°C.
1
FMV17N60ES
Allowable Power Dissipation PD=f(Tc)
Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
FUJI POWER MOSFET
150
10
2
t= 1µs 10µs
125 10 100
1
100µs
PD [ W ]
ID [A]
75
10
0
1m s
50 10 25
-1
P o w e r l o s s w a v e fo r m : S q ua r e w a v efo rm PD
t
0 0 25 50 75 Tc [°C] 100 125 150
10
-2
10
-1
10
0
10 VDS [V]
1
10
2
10
3
Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C
45 40 35 30
I D [ A]
100
Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10V 8.0V
10
7.5V
ID[A]
25 20 15 10 5 0 0 4 8 12 VDS [V] 16 20 24
7 .0 V
1
6 .5 V VGS=6.0V
0.1
0
2
4
6 VGS[V]
8
10
12
100
Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0.7
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
VGS=6.0V 6.5V 7V
0.6
10
RDS(on) [ Ω ]
g f s [ S]
0.5
8V 10V 20V
1
0.4
0.3
0.1 0.1 1 ID [A] 10 100
0 5 10 15 20 ID [A] 25 30 35 40
2
FMV17N60ES
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V
FUJI POWER MOSFET
1.4
8 7 6
VGS(th) [V]
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA
1.2
1.0
5 4 3 2 1 0
RDS(on) [ Ω ]
0.8
m ax. typ. m in.
0.6 max. 0.4 typ.
0.2
0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150
-50
-25
0
25
50 75 Tch [°C]
100
125
150
Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25 °C
14
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
12
10
Vcc= 120V 300V 480V
10
4
10
VGS [ V ]
3
Ciss
C [pF]
8
6
10
2
Coss
4
10
2
1
Crss
0 0 20 40 60 Qg [nC] 80 100 120
10
0
10
-2
10
-1
10
0
10
1
10
2
VDS [V]
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
td(off)
10
10
2
td(on)
I F [ A]
tf
t [ns]
tr
1
1
10
0.1 0.00
10
0.25 0.50 0.75 VSD [V] 1.00 1.25 1.50
0
10
-1
10
0
10
1
10
2
ID [A]
3
FMV17N60ES
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)
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