FMV23N50E

FMV23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ±23 ±92 ±30 23 767.3 13 9.3 100 2.16 130 150 -55 to +150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = - 30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C t = 60sec, f = 60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250 µA, VGS =0V I D =250 µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS = ±30V, VDS =0V I D =11.5A, VGS =10V I D =9.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =9.5A RGS =8.2Ω Vcc =300V I D =19A VGS =10V L=1.71mH, Tch=25°C I F =19A, VGS =0V, Tch =25°C I F =19A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 10 19 typ. 3.0 10 0.21 20 3600 310 23 26 13 150 20 105 23 30 0.90 0.6 10 max. 3.5 25 250 100 0.245 5400 465 35 39 20 225 30 160 35 45 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to Case Channel to Ambient min. typ. max. 0.96 58.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =8A, L=22.9mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc ≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=5.0kV/µs, Vcc ≤BVDSS, Tch≤150°C. 1 FMV23N50E Allowable Power Dissipation PD=f(Tc) Sa fe Operatin g Area ID =f(VDS):Dut y=0(Singl e pul se),T c=25 °c FUJI POWER MOSFET 140 120 10 2 t= 1µs 10µs 100 10 1 100µs 80 PD [W] ID [A] 60 10 0 1ms 40 10 -1 P o we r l o ss wa v e fo r m : S q u a r e w a v e fo r m PD t 20 D.C. 0 0 25 50 75 Tc [°C] 100 125 150 10 -2 10 0 10 1 VDS [V] 10 2 10 3 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 70 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 100 60 10V 50 6.0V 5.5V ID[A] 10 ID [A] 40 5.0V 30 1 20 VGS=4.5V 10 0.1 0 0 4 8 12 VDS [V] 16 20 24 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0.9 0.8 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C VGS=4.5V 5.0V 10 RDS(o n) [ Ω ] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 5.5V 6.0V 10V g fs [S] 1 0.1 0.1 1 ID [A] 10 100 0 10 20 30 ID [A] 40 50 60 2 FMV23N50E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA FUJI POWER MOSFET 1.0 6.0 5.5 0.8 5.0 4.5 4.0 VG S(th ) [V] RDS( on ) [ Ω ] 0.6 3.5 3.0 2.5 m ax. typ. 0.4 m ax. typ. 2.0 1.5 1.0 0.5 m in. 0.2 0.0 - 50 - 25 0 25 50 Tch [°C] 75 100 125 150 0.0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C 14 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Vcc= 100V 250V 400V Ciss 10 3 10 VG S [V] C [pF ] 8 10 2 Coss 6 4 10 1 Cr ss 2 0 0 20 40 60 80 Qg [nC] 100 120 140 10 0 10 -1 10 0 10 1 10 2 10 3 VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=5.6 Ω td(off) tf 10 10 2 IF [A] t [n s] td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 ID [A] 1 3 FMV23N50E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)