FMV24N25G

http://www.fujisemi.com FMV24N25G Super FAP-G series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Symbol VDS VDSX ID I DP VGS IAR E AS dVds/dt dV/dt PD Tch Tstg VISO Characteristics 250 220 ±24 ±96 ±30 24 192 20 5 2.16 65 150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C KVrms Remarks VGS = - 30V Note*1 Note*2 VDS=≤200V Note*3 Ta=25°C Tc=25°C t=60sec, f=60Hz Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD IAV VSD trr Qrr Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=250V, VGS=0V VDS=200V, VGS=0V VGS=±30V, VDS=0V I D =12A, VGS=10V I D =12A, VDS=25V VDS=75V VGS=0V f=1MHz Vcc =72V VGS=10V I D =12A RG=10Ω Vcc =72V I D =24A VGS=10V L=560uH, Tch=25°C I F=24A, VGS=0V, Tch=25°C I F=24A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 250 3.0 8 24 typ. 10 0.11 16 1150 200 13 27 22 35 14 36 14.5 11.5 1.0 0.23 2.5 max. 5.0 25 250 100 0.13 1725 300 19.5 40.5 33 52.5 21 54 21.8 17.3 1.5 Unit V V µA nA Ω S pF Tch=25°C Tch=125°C ns nC A V µS µC Thermal Characteristics Description Channel to Case Channel to Ambient Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=A, L=560uH, Vcc=48V, RG =50Ω, E AS limited by maximum channel temperature and avalanche current. Note *3 : I F ≤-I D, -di/dt=50A/µs, Vcc≤BVDSS, Tch≤150°C. Symbol Rth (ch-c) Rth (ch-a) min. typ. max. 1.923 58.0 Unit °C/W °C/W 1 FMV24N25G AllowablePowerDissipation PD=f(Tc) FUJI POWER MOSFET http://www.fujisemi.com 80 70 50 Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25˚C 20V 10V 8.0V 40 60 50 PD [W] 30 ID [A] 7.5V 40 30 20 20 7.0V 10 10 0 0 25 50 75 Tc [˚ C] 100 125 150 0 0 2 4 VDS [V] 6 8 6.5V VGS=6.0V 10 Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C Typical Transconductance gfs=f(ID):80 µs pulse test, VDS=25V, Tch=25˚C 10 10 ID[A] 1 gfs[S] 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 1 ID [A] 10 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25˚C VGS=6.0V 6.5V 7.0V 0.4 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.0A, VGS=10V 0.25 0.3 RDS(on) [ Ω ] 7.5V 0.20 8.0V 0.15 RDS(on) [ Ω ] 0.2 max. 10V 20V 0.1 typ. 0.10 0.0 -50 -25 0 25 50 Tch [˚ C] 75 100 125 150 10 20 ID [A] 30 40 2 FMV24N25G Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 7.0 6.5 6.0 5.5 5.0 VGS(th) [V] FUJI POWER MOSFET http://www.fujisemi.com 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=24.0A, Tch=25˚C 12 max. 10 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 Tch [˚ C] 100 125 150 0 0 10 20 2 4 VGS [V] Vcc=72V 8 min. 6 30 Qg [nC] 40 50 Typical Capacitance C=f(VDS):VGS=0V, f=1MHz 10 4 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µspulsetest, Tch=25˚C 100 10 3 Ciss 10 Coss C [pF] 10 2 IF [A] 1 10 1 Crss 10 0 10 -1 10 0 10 VDS [V] 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG=10Ω 600 Maximum Avalanche Energy vs. starting Tch E(AV)=f(startingTch):Vcc=48V, I(AV)