FMW20N60S1HF

http://www.fujielectric.com/products/semiconductor/ FMW20N60S1HF Super J-MOS series Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-247-P2 Equivalent circuit schematic Applications UPS Server Telecom Power conditioner system Power supply Gate(G) ① ② ③ Drain(D) Source(S) CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS. ① ② ③ Maximum Ratings and Characteristics Absolute Maximum Ratings at TC =25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Note *1 : Limited by maximum channel temperature. Note *2 : Tch ≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25°C, IAS=2A, L=216mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/μs, VDD ≤400V, Tch ≤150°C. Note *5 : I F ≤-I D, dV/dt=15kV/μs, VDD ≤400V, Tch ≤150°C. Symbol VDS VDSX ID IDP VGS IAR EAS dVDS /dt dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±20 ±12.6 ±60 ±30 6.6 472.2 50 15 100 2.5 140 150 -55 to +150 Unit V V A A A V A mJ kV/μs kV/μs A/μs W °C °C Remarks VGS=-30V Tc=25°C Tc=100°C Note*1 Note*1 Note *2 Note *3 VDS ≤ 600V Note *4 Note *5 Ta =25°C Tc=25°C 1 FMW20N60S1HF Electrical Characteristics at TC =25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Conditions ID =250μA VGS=0V ID =250μA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS= ± 30V VDS=0V ID =10A VGS=10V f=1MHz, open drain ID =10A VDS=25V VDS=10V VGS=0V f=1MHz VGS=0V VDS=0…480V VGS=0V VDS=0…480V ID=constant VDD =400V, VGS=10V ID =10A, RG =27Ω See Fig.3 and Fig.4 VDD =480V, ID =20A VGS=10V See Fig.5 L=6.02mH,Tch =25°C See Fig.1 and Fig.2 IF=20A,VGS=0V Tch =25°C IF=20A, VGS=0V VDD =400V -di/dt=100A/μs Tch =25°C See Fig.6 Tch =25°C Tch =125°C FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ min. 600 2.5 8.5 6.6 - typ. 3 10 0.161 3.7 17.5 1470 3120 280 90 305 22 40 162 22 48 12.5 15 8 0.9 370 max. 3.5 25 250 100 0.19 1.35 - Unit V V μA Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Gate resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective output capacitance, energy related (Note *6) Effective output capacitance, time related (Note *7) Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current IGSS RDS(on) RG gfs Ciss Coss Crss Co(er) Co(tr) td(on) tr td(off) tf QG QGS QGD QSW IAV VSD trr Qrr Irp nA Ω Ω S pF ns nC A V ns μC A - 6.2 32 Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% BVDSS . Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 80% BVDSS . Thermal Characteristics Description Channel to Case Channel to Ambient Symbol Rth(ch-c) Rth(ch-a) min. typ. max. 0.89 50 Unit °C/W °C/W 2 FMW20N60S1HF Allowable Power Dissipation PD= f(TC) 140 120 100 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ 10 2 Safe Operating Area ID= f(VDS): Duty=0(Single pulse), TC=25°C t= 1µs 10 1 10µs 100µs PD [W] 80 60 40 20 0 0 25 50 75 TC [°C] 100 125 150 ID [A] 10 0 10 -1 Power loss waveform : Square waveform PD t 1ms 10 -2 10 -1 10 0 10 VDS [V] 1 10 2 10 3 Typical Output Characteristics ID= f(VDS): 80µs pulse test, Tch=25°C 60 55 50 45 40 35 ID [A] 30 25 20 15 10 5 0 0 5 10 VDS [V] 15 20 25 40 Typical Output Characteristics ID= f(VDS): 80µs pulse test, Tch=150°C 10V 20V 8V 6.5V 35 30 8V 10V 20V 6V 25 ID [A] 6V 5.5V 20 15 10 5.5V 5V 5V 5 4.5V VGS=4.5V 0 0 5 10 VDS [V] 15 20 VGS=4V 25 0.6 Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80µs pulse test, Tch=25°C 4.5V 5V 5.5V 6V 6.5V 8V 10V 1.4 1.2 1.0 RDS(on) [ Ω ] VGS=20V 0.8 0.6 0.4 Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80µs pulse test, Tch=150°C 4V 4.5V 5V 0.5 5.5V 0.4 RDS(on) [ Ω ] 6V 8V 10V VGS=20V 0.3 0.2 0.1 0.2 0.0 0 5 10 15 20 25 30 ID [A] 35 40 45 50 55 60 0 5 10 15 20 ID [A] 25 30 35 40 0.0 3 FMW20N60S1HF Drain-Source On-state Resistance RDS(on)= f(Tch): ID=10A, VGS=10V FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ 0.6 6 Gate Threshold Voltage vs. Tch VGS(th)= f(Tch): VDS=VGS, ID=250µA 0.5 5 0.4 RDS(on) [ Ω ] 4 VGS(th) [V] max. 0.3 3 typ. 2 0.2 typ. 0.1 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 150 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 100 Typical Transfer Characteristic ID= f(VGS): 80µs pulse test, VDS=25V Typical Transconductance gfs= f(ID): 80µs pulse test, VDS=25V 100 10 Tch=25℃ 10 1 ID[A] 150℃ 0.1 gfs [S] Tch=25℃ 150℃ 1 0.01 1E-3 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 1 ID [A] 10 100 Typical Forward Characteristics of Reverse Diode IF= f(VSD): 80µs pulse test 10 5 Typical Capacitance C= f(VDS): VGS=0V, f=1MHz 100 10 4 10 3 Ciss 10 150℃ C [pF] IF [A] Tch=25℃ 10 2 Coss 1 10 1 10 0 Crss 0.1 0.0 0.5 1.0 VSD [V] 1.5 2.0 10 -1 10 -2 10 -1 10 VDS [V] 0 10 1 10 2 4 FMW20N60S1HF Typical Coss stored energy 14 FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ 10 3 Typical Switching Characteristics vs. ID Tch=25°C t= f(ID): Vdd=400V, VGS=10V/0V, RG=27Ω, L=500uH 12 10 8 Eoss [uJ] tr t [ns] 10 2 td(off) 6 4 tf 2 td(on) 0 0 100 200 300 VDS [V] 400 500 600 10 1 10 0 10 1 10 2 ID [A] 10 Typical Gate Charge Characteristics VGS= f(Qg): ID=20A, Vdd=480V, Tch=25°C 500 450 Maximum Avalanche Energy vs. startingTch E(AV)= f(starting Tch): VCC=60V, I(AV)