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KS823C04

KS823C04

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    KS823C04 - SCHOTTKY BARRIER DIODE - Fuji Electric

  • 数据手册
  • 价格&库存
KS823C04 数据手册
KS823C04 (5A) SCHOTTKY BARRIER DIODE 6.5 ±0.2 (40V / 5A ) Outline drawings, mm 1.5 —0.1 +0.2 2.3±0.2 0.5 5±0.2 5.5 ±0.2 0 .9 —0.1 4.6 +0.2 Features Surface mount device Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2, 4. Drain 3. Source Connection diagram Applications High speed power switching 1 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=108°C Sine wave 10ms Conditions Rating 40 48 5.0* 60 -40 to +150 -40 to +150 Unit V V A A °C °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=2.5A VR=VRRM Junction to case Max. 0.55 5.0 10 Unit V mA °C/W 1.0 2.5 ±0.5 (40V / 5A ) Characteristics Forward Characteristic (typ.) 100 10 2 KS823C04 (5A) Reverse Characteristic (typ.) o Tj=150 C 10 1 Tj=125 C o 10 Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1 o o o o Reverse Current (mA) (A) Tj=100 C 10 0 o Forward Current 10 -1 IF IR 10 -2 Tj= 25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -3 0 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 3.0 2.8 2.6 Io Reverse Power Dissipation 3.5 360° DC 3.0 (W) 2.4 2.2 360° (W) λ VR 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Square wave λ =60 o o Reverse Power Dissipation Forward Power Dissipation 2.5 α Square wave λ =120 2.0 α =180 o Sine wave λ =180 o Square wave λ =180 DC o 1.5 1.0 WF PR Per 1element 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.5 0.0 0 5 10 15 20 25 30 35 40 45 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 160 150 140 130 120 110 100 Square wave λ =120 90 80 360° λ Io o Junction Capacitance Characteristic (typ.) 1000 o C) DC Case Temperature Junction Capacitance Cj ( (pF) Sine wave λ =180 o Square wave λ =180 o 100 Tc Square wave λ =60 VR=30V o 70 60 0 1 2 3 4 5 6 7 8 10 1 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (40V / 5A ) KS823C04 (5A) Surge Capability 100 Peak Half - Wave Current I FSM (A) 10 1 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 ( Transient Thermal Impedance 10 1 o C/W ) 10 0 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec.)
KS823C04 价格&库存

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