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KS826S04_01

KS826S04_01

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    KS826S04_01 - SCHOTTKY BARRIER DIODE - Fuji Electric

  • 数据手册
  • 价格&库存
KS826S04_01 数据手册
KS826S04 (5A) SCHOTTKY BARRIER DIODE 6.5 ±0.2 (40V / 5A ) Outline drawings, mm 1.5 —0.1 +0.2 2.3±0.2 0.5 5±0.2 5.5 ±0.2 0..9 —0.1 4.6 +0.2 Features Surface-mount device Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2, 4. Drain 3. Source Connection diagram Applications High speed power switching 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=110°C Sine wave 10ms Conditions Rating 40 48 5.0 80 -40 to +150 -40 to +150 Unit V V A A °C °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=5.0A VR=VRRM Junction to case Max. 0.55 5.0 10 Unit V mA °C/W 1.0 2.5 ±0.5 (40V / 5A ) Characteristics Forward Characteristic (typ.) 100 10 2 KS826S04 (5A) Reverse Characteristic (typ.) Tj=150 C o 10 1 Tj=125 C o 10 (A) Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1 o o o o (mA) Tj=100 C 0 o 10 Forward Current Reverse Current 10 -1 Tj= 25 C o IR 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 -2 IF 10 -3 0 5 10 15 20 25 30 35 40 45 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 6.0 5.5 5.0 Io Reverse Power Dissipation 3.2 3.0 2.8 360° VR DC (W) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 360° (W) Reverse Power Dissipation λ 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Forward Power Dissipation α Square wave λ=60 Square wave λ =120 Sine wave λ =180 o o o α =180 o Square wave λ =180 o DC WF Per 1element 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 PR 0 5 10 15 20 25 30 35 40 45 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 160 150 140 130 1000 Junction Capacitance Characteristic (typ.) C) o DC Sine wave λ=180 o o Case Temperature 110 100 90 80 70 60 50 0 1 2 3 4 5 Square wave λ =180 Square wave λ =120 Junction Capacitance Cj 8 120 ( (pF) 100 o 360° λ Io VR=30V Square wave λ =60 o Tc 10 6 7 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (40V / 5A ) Surge Capability 100 KS826S04 (5A) Peak Half - Wave Current I FSM (A) 10 1 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 ( C/W) Transient Thermal Impedance 10 1 o 10 0 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec.)
KS826S04_01 价格&库存

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