TS862C04R

TS862C04R (45V/10A) Low IR Schottky barrier diode 10 +0.5 [0401] Outline drawings, mm 0.9 ±0.3 4.5 ±0.2 1.32 Low IR Low VF Center tap connection 1.5 Max 9.3 ±0.5 Features 1.2 ±0.2 5.08 0.8 —0.1 2.7 +0.2 0.4 +0.2 Applications High frequency operation DC-DC converters AC adapter 1. Gate 2, 4. Drain 3. Source Package : T-pack Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current non-repetitive reverse surge power dissipation Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Te r m i n a l s - t o - C a s e , AC.1min. Square wave, duty=1/2 Tc=138°C Rating 45 45 1500 10 125 330 +150 -40 to +150 * Unit V V V A A W °C °C Sine wave 10ms tw=10µs, Tj=25°C Operating junction temperature Storage temperature * Out put current of center tap full wave connection Electrical characteristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=5A VR=40V Junction to case Max. 0.61 150 2.0 Unit V µA °C/W **Rating per element Mechanical characteristics Mounting torque Approximate mass http://www.fujielectric.co.jp/fdt/scd/ Recommended torque 0.3 to 0.5 2 N·m g 3.0 ±0.3 (45V / 10A ) Characteristics Forward Characteristic (typ.) TS862C04R (10A) Reverse Characteristic (typ.) 10 2 Tj=150 C 10 1 o Tj=125 C Tj=100 C o o Forward Current (A) IR Reverse Current (mA) 10 Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1 o o o o 10 0 10 -1 Tj= 25 C 10 -2 o IF 10 -3 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -4 0 10 20 30 40 50 60 VF Forward Voltage (V) VR Reverse Voltage (V) 6 Forward Power Dissipation (max.) Io 3 Reverse Power Dissipation (max.) DC 360 º λ PR Reverse Power Dissipation (W) WF Forward Power Dissipation (w) VR 2 360 º 4 Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 3 Square wave λ=180o DC 2 o α o 1 1 Per 1element 0 0 1 2 3 4 5 6 0 0 10 20 30 40 50 60 Io Average Output Current (A) VR Reverse Voltage (V) 155 Current Derating (Io-Tc) (max.) 1000 Junction Capacitance Characteristic (max.) 150 Case Temperature ( C) 145 140 DC Square wave λ=180 o Sine wave λ=180 o Junction Capacitance (pF) o 100 135 360 º Square wave λ=120 o λ 125 0 λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 543210987654321 543210987654321 543210987654321 Tc 130 Square wave λ=60 o VR=20V Cj Io 5 10 15 10 1 10 100 1000 Io Average Output Current (A) VR 4321 4321 4321 4321 4321 4321 4321 4321 α=180 4321 4321 4321 4321 4321 4321 4321 4321 5 543210987654321 543210987654321 543210987654321 Reverse Voltage (V) (45V / 10A ) TS862C04R (10A) 1000 Surge Capability (max.) I FSM Peak Half - Wave Current (A) 100 10 1 10 100 Number of Cycles at 50Hz 1000 Surge Current Ratings (max.) IFSM PeakHAlf-WaveCurrent (A) 100 10 1 10 100 1000 tTime (ms) Sinewave 10 1 Transient Thermal Impedance (max.) (°C/W) Rth(j-c):2.0°C/W Transient Thermal Impedance 10 0 10 -1 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) http://www.fujielectric.co.jp/fdt/scd/