TS862C15R

TS862C15R Major characteristics VRRM VF IO 150 0.90 10 V V A (10A) (150V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Characteristics TS862C15R Units Condition Tc=25°C, MAX. 1.2 ±0.2 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 0.8 —0.1 5.08 2.7 +0.2 0.4 +0.2 1. Gate 2, 4. Drain 3. Source Features Low VF High Voltage Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : T-pack Epoxy resin UL : V-0 Connection diagram Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Average output current Non-repetitive surge current ** Operating junction temperature Storage temperature Symbol VRSM VRRM Io IFSM Tj Tstg Square wave, duty=1/2 Tc=133°C Sine wave 10ms 1shot Conditions tw=500ns, duty=1/40 1 2 3 Rating 150 150 10 * 75 +150 -40 to +150 Unit V V A A °C °C * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IFM=10A VR=VRRM Junction to case Max. 0.90 150 1.5 Unit V µA °C/W Mechanical characteristics Approximate mass 2 g 3.0 ±0.3 (150V / 10A ) Characteristics Forward Characteristic (typ.) 100 10 1 TS862C15R (10A) Reverse Characteristic (typ.) Tj=150°C Tj=125°C (A) 10 I F Forward Current Reverse Current Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 (mA) 10 0 Tj=100°C 10 -1 10 -2 Tj= 25°C IR 0.1 0.0 10 -3 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -4 0 10 20 30 40 50 60 70 80 90 100110120130140150160 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation (max.) 8 Io Reverse Power Dissipation (max.) DC 360° (W) λ (W) 6 VR Forward Power Dissipation Reverse Power Dissipation 6 360° α Square wave λ =60° Square wave λ =120° Sine wave λ =180° 4 Square wave λ =180° DC 4 α=180° 2 2 WF Per 1element 0 0 2 4 6 0 0 20 40 60 80 100 120 140 160 Io Average Forward Current (A) PR VR Reverse Voltage (V) Current Derating (Io-Tc) (max.) 160 1000 Junction Capacitance Characteristic (max.) 150 (°C) 140 Case Temperature DC Sine wave λ=180° Square wave λ =180° Square wave λ =120° Square wave λ=60° 130 Junction Capacitance (pF) Cj 120 100 110 360° λ Io VR=75V Tc 100 90 80 0 5 10 15 10 1 10 100 1000 λ :Conduction angle of forward current for each rectifier element Io Average Output Current (A) VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (150V / 10A ) TS862C15R (10A) Surge Capability (max.) 1000 1000 Surge Current Ratings (max.) (A) IFSM PeakHAlf-WaveCurrent (A) Peak Half - Wave Current 100 100 I FSM 10 1 10 100 10 1 10 100 1000 Number of Cycles at 50Hz tTime (ms) Sinewave Transient Thermal Impedance (max.) 10 1 (°C/W) Rth(j-c):1.5°C/W 10 0 Transient Thermal Impedance 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec)